Datasheet > IXFN170N25X3

IXFN170N25X3

更新时间： 2024-11-05 21:17:43

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	154K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IXFN170N25X3 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	4.74
Base Number Matches：	1

IXFN170N25X3 数据手册

Advance Technical Information

X3-Class HiPerFET^TM

Power MOSFET

V_DSS= 250V

I_D25= 146A

R_DS(on) 7.4m

IXFN170N25X3

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

miniBLOC, SOT-227

E153432

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

250

V_GSS

V_GSM

Continuous

Transient

 20

 30

D = Drain

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

146

400

G = Gate

S = Source

I_A

E_AS

T_C= 25C

2.3

P_D

T_C= 25C

390

dv/dt

I_S I_DM, V_DD V_DSS, T_J 150°C

V/ns

Features

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

C



International Standard Package

miniBLOC, with Aluminium Nitride

Isolation

Isolation Voltage 2500 V~

High Current Handling Capability

Fast Intrinsic Diode



V_ISOL

50/60 Hz, RMS

I_ISOL 1mA

t = 1 minute

t = 1 second

2500

3000



M_d

Mounting Torque

Terminal Connection Torque

1.5/13

1.3/11.5

Nm/lb.in



Avalanche Rated

Low R_DS(on)

Weight

Advantages



High Power Density

Easy to Mount

Space Savings



Symbol

Test Conditions

Characteristic Values



(T_J= 25C Unless Otherwise Specified)

Min.

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 4mA

V_GS=  20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

250

Applications

2.5

4.5



Switch-Mode and Resonant-Mode

100 nA

Power Supplies



DC-DC Converters

PFC Circuits

AC and DC Motor Drives

Robotics and Servo Controls

I_DSS

10 A

1 mA



T_J= 125C



R_DS(on)

V_GS= 10V, I_D= 85A, Note 1

6.1

7.4 m

DS100825A(4/17)

12 3 4 5 6

中文翻译

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