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IXFN200N07 PDF预览

IXFN200N07

更新时间: 2024-11-04 21:53:51
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页数 文件大小 规格书
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描述
HiPerFET Power MOSFETs

IXFN200N07 技术参数

是否无铅: 不含铅生命周期:Transferred
包装说明:FLANGE MOUNT, R-PUFM-X4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:3.74Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):2000 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:70 V最大漏极电流 (Abs) (ID):200 A
最大漏极电流 (ID):200 A最大漏源导通电阻:0.006 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PUFM-X4
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL功耗环境最大值:520 W
最大功率耗散 (Abs):520 W最大脉冲漏极电流 (IDM):600 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Nickel (Ni)
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFN200N07 数据手册

 浏览型号IXFN200N07的Datasheet PDF文件第2页浏览型号IXFN200N07的Datasheet PDF文件第3页浏览型号IXFN200N07的Datasheet PDF文件第4页 
HiPerFETTM  
VDSS  
ID25  
RDS(on)  
IXFN 200 N06  
IXFN 180 N07  
IXFN 200 N07  
60 V  
70 V  
70 V  
200 A 6 mW  
180 A 7 mW  
200 A 6 mW  
Power MOSFETs  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low trr  
trr £ 250 ns  
Symbol  
VDSS  
TestConditions  
MaximumRatings  
miniBLOC, SOT-227 B (IXFN)  
E153432  
TJ = 25°C to 150°C  
N07  
N06  
N07  
N06  
70  
60  
70  
60  
V
V
V
V
S
VDGR  
TJ = 25°C to 150°C; RGS = 1 MW  
G
VGS  
Continuous  
Transient  
±20  
±30  
V
V
VGSM  
S
D
ID25  
TC= 25°C; Chip capability  
200N06/200N07  
180N07  
200  
180  
100  
A
A
A
IL(RMS)  
Terminalcurrentlimit  
G = Gate  
D = Drain  
S = Source  
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
IDM  
IAR  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
600  
100  
A
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
30  
2
mJ  
J
Features  
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
,
5
V/ns  
• Internationalstandardpackages  
• miniBLOCwithAluminiumnitride  
isolation  
PD  
TC = 25°C  
520  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
• Low RDS (on) HDMOSTM process  
• Rugged polysilicon gate cell structure  
• Unclamped Inductive Switching (UIS)  
rated  
VISOL  
50/60 Hz, RMS  
IISOL £ 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
• Low package inductance  
• Fast intrinsic Rectifier  
Md  
Mountingtorque  
Terminalconnectiontorque  
1.5/13Nm/lb.in.  
1.5/13Nm/lb.in.  
Applications  
Weight  
30  
g
• DC-DC converters  
• Synchronousrectification  
• Battery chargers  
• Switched-modeandresonant-mode  
powersupplies  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
• DC choppers  
• Temperatureandlightingcontrols  
• Low voltage relays  
VDSS  
VGS = 0 V, ID = 1 mA  
N06  
N07  
60  
70  
V
V
VGS (th)  
IGSS  
VDS = VGS, ID = 8 mA  
VGS = ±20 VDC, VDS = 0  
VDS = 0.8 • VDSS  
2
4
V
±200 nA  
400 mA  
Advantages  
IDSS  
TJ = 25°C  
VGS = 0 V  
VGS = 10 V, ID = 0.5 • ID25  
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
TJ = 125°C  
2
mA  
• Easy to mount  
• Space savings  
• High power density  
RDS(on)  
200N06/200N07  
180N07  
6
7
mW  
mW  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
97533A(9/99)  
1 - 4  

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