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IXFN200N10P PDF预览

IXFN200N10P

更新时间: 2024-11-06 14:56:07
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 199K
描述
功能与特色: 优点: 应用:

IXFN200N10P 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PUFM-X4Reach Compliance Code:compliant
风险等级:5.75其他特性:AVALANCHE RATED, UL RECOGNIZED
雪崩能效等级(Eas):4000 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):200 A最大漏源导通电阻:0.0075 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PUFM-X4
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):400 A
认证状态:Not Qualified表面贴装:NO
端子面层:Nickel (Ni)端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFN200N10P 数据手册

 浏览型号IXFN200N10P的Datasheet PDF文件第2页浏览型号IXFN200N10P的Datasheet PDF文件第3页浏览型号IXFN200N10P的Datasheet PDF文件第4页浏览型号IXFN200N10P的Datasheet PDF文件第5页浏览型号IXFN200N10P的Datasheet PDF文件第6页 
PolarTM HiPERFET  
Power MOSFET  
VDSS  
ID25  
= 100V  
= 200A  
IXFN200N10P  
RDS(on) < 7.5m  
N-Channel Enhancement Mode  
Avalanche Rated  
S
miniBLOC, SOT-227  
E153432  
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
TJ = 25C to 175C  
100  
100  
V
V
VDGR  
TJ = 25C to 175C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
S
D
D = Drain  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
200  
400  
A
A
G = Gate  
S = Source  
IA  
EAS  
TC = 25C  
TC = 25C  
60  
4
A
J
Either Source Terminal S can be used as  
the Source Terminal or the Kelvin Source  
(Gate Return) Terminal.  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
10  
V/ns  
W
680  
TJ  
-55...+175  
175  
C  
C  
C  
TJM  
Tstg  
-55...+175  
Features  
VISOL  
50/60 Hz, RMS  
IISOL 1mA  
t = 1 minute  
t = 1 second  
2500  
3000  
V~  
V~  
International Standard Package  
miniBLOC, with Aluminium Nitride  
Isolation  
Low RDS(on) and QG  
Avalanche Rated  
Low Package Inductance  
Fast Intrinsic Rectifier  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in  
Nm/lb.in  
Weight  
30  
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25C, Unless Otherwise Specified)  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 8mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
100  
V
V
Applications  
2.5  
5.0  
DC-DC Coverters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC Choppers  
100 nA  
IDSS  
25  A  
500 A  
TJ = 150C  
AC and DC Motor Drives  
Uninterrupted Power Supplies  
High Speed Power Switching  
Applications  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 15V, ID = 400A, Note 1  
7.5 m  
5.5  
m  
DS99239F(02/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  

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