Datasheet > IXFN24N100_08

IXFN24N100_08

更新时间： 2024-11-21 11:14:03

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	107K
描述
HiPerFET Power MOSFET

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中文翻译

获取价格

数据手册

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IXFN24N100_08 数据手册

HiPerFET^TMPower

MOSFET

V_DSS= 1000V

I_D25= 24A

IXFN24N100

R_DS(on)≤ 390mΩ

N-Channel Enhancement Mode

Avalanche Rated

t_rr

≤ 250ns

Fast Intrinsic Diode

miniBLOC, SOT-227 B

E153432

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

1000

V_DGR

T_J= 25°C to 150°C, R_GS= 1MΩ

V_GSS

V_GSM

Continuous

Transient

±20

± 30

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

G = Gate

S = Source

D = Drain

I_A

T_C= 25°C

E_AS

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

568

Features

T_J

-55 ... +150

150

°C

• International standard package

• Encapsulating epoxy meets

UL94V-0, flammability classification

• miniBLOC with Aluminium nitride

isolation

• Low R_{DS (on)}HDMOS^TMprocess

• Rugged polysilicon gate cell structure

• Avalanche rated

T_JM

T_stg

-55 ... +150

T_L

1.6mm (0.062 in.) from case for 10s

300

°C

V_ISOL

50/60 Hz, RMS

t = 1min

2500

3000

I_ISOL≤ 1mA

t = 1s

• Low package inductance

• Fast intrinsic Rectifier

M_d

Mounting torque

Terminal connection torque

1.5/13

1.3/11.5

Nm/lb.in.

Applications

Weight

• DC-DC converters

• Synchronous rectification

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• Temperature and lighting controls

• Low voltage relays

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= ±20V, V_DS= 0V

1000

3.0

5.5

±200

Advantages

I_DSS

V_DS= V_DSS

V_GS= 0V

100

μA

T_J= 125°C

• Easy to mount

• Space savings

• High power density

R_DS(on)

V_GS= 10V, I_D= 12A, Note 1

390 mΩ

DS98597H(10/08)

12 3 4

中文翻译

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