Datasheet > IXFN24N100_08

IXFN24N100_08

更新时间： 2022-11-10 23:47:07

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	107K
描述
HiPerFET Power MOSFET

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IXFN24N100_08 数据手册

IXFN24N100

Symbol

Test Conditions

Characteristic Values

SOT-227B Outline

(T_J= 25°C, unless otherwise specified)

Min.

Typ.

Max.

g_fs

V_DS= 10V, I_D= 12A, Note 1

C_iss

C_oss

C_rss

t_d(on)

t_r

8700

785

315

V_GS= 0V, V_DS= 25V, f = 1MHz

Resistive Switching Times

V_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 12A

R_G= 1Ω (External)

t_d(off)

t_f

Q_g(on)

Q_gs

267

V_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 12A

Q_gd

142

R_thJC

R_thCS

0.22 °C/W

°C/W

0.05

Source-Drain Diode

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Symbol

I_S

Test Conditions

Min.

Typ.

Max.

V_GS= 0V

I_SM

Repetitive, pulse width limited by T_JM

I_F= 24A, V_GS= 0V, Note 1

V_SD

1.5

t_rr

Q_RM

I_RM

250

μC

I_F= 24A, -di/dt = 100A/μs

1.0

8.0

V_R= 100V

Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered

by one or more of the following U.S. patents: 4,850,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1 6,683,344

6,534,343

6,583,505

6,727,585

6,710,405 B2 6,759,692

6,710,463

7,005,734 B2 7,157,338B2

7,063,975 B2

6,771,478 B2 7,071,537

123 4

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