Datasheet > MDF1921TH

MDF1921TH

更新时间： 2024-11-18 01:16:39

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	985K
描述
Single N-channel Trench MOSFET 100V, 60A, 4.8m(ohm)

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MDF1921TH 数据手册

MDF1921

Single N-channel Trench MOSFET 100V, 60A, 4.8mΩ

General Description

Features

The MDF1921 uses advanced MagnaChip’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality. MDF1921 is suitable device for Synchronous

Rectification for Server / Adapter and general purpose

applications.



V_DS= 100V

I_D= 60A @V_GS= 10V

R_DS(ON)

< 4.8 mΩ @V_GS= 10V

100% UIL Tested

100% Rg Tested



TO-220F

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

Rating

100

±20

Unit

V_DSS

V_GSS

Gate-Source Voltage

T_C=25^oC

Continuous Drain Current ⁽¹⁾

T_C=100^oC

I_D

Pulsed Drain Current

I_DM

240

T_C=25^oC

Power Dissipation

P_D

T_C=100^oC

Single Pulse Avalanche Energy ⁽²⁾

E_AS

200

-55~150

^oC

Junction and Storage Temperature Range

T_J, T_stg

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient ⁽¹⁾

Thermal Resistance, Junction-to-Case

Symbol

R_θJA

Rating

62.5

Unit

^oC/W

R_θJC

3.5

Mar. 2014. Version 1.1

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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