Datasheet > BLP5LA55S

BLP5LA55S

更新时间： 2024-05-27 20:45:36

品牌	Logo	应用领域
安谱隆 - AMPLEON		/
页数	文件大小	规格书
21页	1985K
描述
Power LDMOS transistor

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BLP5LA55S 数据手册

BLP5LA55S

Power LDMOS transistor

Rev. 4 — 12 January 2023

Product data sheet

1. Product profile

1.1 General description

This 13.6 V 55 W device is designed for land mobile radio (LMR) applications supporting

the frequency range from HF up to 520 MHz.

Table 1.

Application performance

Typical RF performance at T_case= 25 C; in a class-AB demo circuit.

Test signal

I_Dq

V_DS

P_L(AV)

(W)

G_p

_D

RL_in

(dB)

7.8

6.3

15.3

(MHz)

145 to 165

380 to 450

520

(mA) (V)

(dB)

>23.0

>20.4

19.6

(%)

893

15.0

>66.4

>62.3

75.0

13.6

100

1.2 Features and benefits

 High efficiency

 Integrated dual sided ESD protection

 Extreme ruggedness 65 : 1

 High power gain

 Excellent reliability

 Wideband

 High linearity

 For RoHS compliance see the product details on the Ampleon website

1.3 Applications

 TETRA, SSB and LTE mobile radio applications in VHF and UHF bands

 Wideband radio application, frequency range from 5 MHz to 30 MHz and from 30 MHz

to 512 MHz

12 3 4 5 6 7...21

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