Datasheet > GK35PI60T5H

GK35PI60T5H

更新时间： 2024-11-18 17:15:35

品牌	Logo	应用领域
银茂微 - SILVERMICRO		双极性晶体管
页数	文件大小	规格书
11页	809K
描述
PIM IGBT-600V

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中文翻译

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数据手册

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GK35PI60T5H 数据手册

GK35PI60T5H

IGBT Module

Features：

Short Circuit Rated >10μs

Low Saturation Voltage: V_{CE (sat)}= 1.80V @ I_C= 35A , T_C=25℃

Low Switching Loss

100% RBSOA Tested（2×Ic）

Low Stray Inductance

Lead Free, Compliant with RoHS Requirement

Applications：

Industrial Inverters

Servo Applications

IGBT, Inverter

Maximum Rated Values (T_C=25℃ unless otherwise specified)

V_CES

V_GES

Collector-Emitter Blocking Voltage

Gate-Emitter Voltage

600

±20

T_C= 80℃,

T_C= 25℃

T_J= 150℃

Continuous Collector Current

I_C

I_CM(1)

t_SC

Peak Collector Current Repetitive

Short Circuit Withstand Time

>10

260

μs

T_C= 25℃

T_Jmax=150℃

P_D

Maximum Power Dissipation per IGBT

www.njsme.com

Page 1 Rev. A

07/07/2019

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