5秒后页面跳转
IXFN21N100Q PDF预览

IXFN21N100Q

更新时间: 2024-11-21 11:14:03
品牌 Logo 应用领域
IXYS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
4页 132K
描述
HiPerFET TM Power MOSFETs Q-Class

IXFN21N100Q 技术参数

是否无铅: 不含铅生命周期:Transferred
包装说明:FLANGE MOUNT, R-PUFM-X4针数:4
Reach Compliance Code:unknown风险等级:5.73
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):2500 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:1000 V
最大漏极电流 (Abs) (ID):21 A最大漏极电流 (ID):21 A
最大漏源导通电阻:0.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PUFM-X4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):520 W最大脉冲漏极电流 (IDM):84 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Nickel (Ni)
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFN21N100Q 数据手册

 浏览型号IXFN21N100Q的Datasheet PDF文件第2页浏览型号IXFN21N100Q的Datasheet PDF文件第3页浏览型号IXFN21N100Q的Datasheet PDF文件第4页 
HiPerFETTM  
Power MOSFETs  
VDSS = 1000 V  
ID25 21 A  
IXFN 21N100Q  
=
Q-Class  
Single MOSFET Die  
RDS(on) = 0.50 Ω  
t 250 ns  
rr  
N-ChannelEnhancementMode  
Avalanche Rated, Low Qg, High dv/dt  
miniBLOC,SOT-227B(IXFN)  
E153432  
Symbol  
TestConditions  
Maximum Ratings  
S
G
VDSS  
VDGR  
TJ = 25°C to 150°C  
1000  
1000  
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
VGS  
Continuous  
Transient  
±20  
±30  
V
V
S
VGSM  
D
ID25  
IDM  
IAR  
TC = 25°C  
21  
84  
21  
A
A
A
G = Gate  
S = Source  
D = Drain  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
EAR  
EAS  
TC = 25°C  
60  
mJ  
J
Features  
2.5  
IXYS advanced low Qg process  
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
,
5
V/ns  
Lowgatechargeandcapacitances  
- easier to drive  
-fasterswitching  
PD  
TC = 25°C  
520  
W
UnclampedInductiveSwitching(UIS)  
rated  
TJ  
-55 to +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
VISOL  
Low RDS (on)  
Fastintrinsicdiode  
Internationalstandardpackage  
miniBLOC withAluminiumnitride  
isolationforlowthermalresistance  
Lowterminalinductance(<10nH)and  
straycapacitancetoheatsink(<35pf)  
Molding epoxies meet UL 94 V-0  
flammabilityclassification  
-55 to +150  
50/60 Hz, RMS t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
IISOL1 mA  
Md  
Mountingtorque  
Terminalconnectiontorque  
1.5/13  
1.5/13  
Nm/lb.in.  
Nm/lb.in.  
Weight  
30  
g
Applications  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
DC-DC converters  
Batterychargers  
min.  
typ.  
max.  
Switched-modeandresonant-mode  
power supplies  
VDSS  
VGS = 0 V, ID = 1 mA  
VDS = VGS, ID = 1.5 mA  
1000  
2.5  
V
V
VGS(th)  
4.5  
DC choppers  
Temperatureandlightingcontrols  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±100  
nA  
VDS = VDSS  
VGS = 0 V  
100  
2
µA  
mA  
Advantages  
TJ = 125°C  
Easy to mount  
Space savings  
High power density  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t 300 µs, duty cycle d 2 %  
0.50  
98762A (12/01)  
© 2001 IXYS All rights reserved  

IXFN21N100Q 替代型号

型号 品牌 替代类型 描述 数据表
IXFK21N100Q IXYS

功能相似

HiPerFET Power MOSFETs Q-CLASS
IXFK21N100F IXYS

功能相似

HiPerRF Power MOSFETs F-Class: MegaHertz Switching
IXFN24N100 IXYS

功能相似

HiPerRF Power MOSFETs

与IXFN21N100Q相关器件

型号 品牌 获取价格 描述 数据表
IXFN220N20X3 LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXFN22N120 IXYS

获取价格

HiPerFET Power MOSFETs
IXFN230N10 IXYS

获取价格

Power MOSFETs Single Die MOSFET
IXFN230N10 LITTELFUSE

获取价格

功能与特色: 应用: 优点:
IXFN230N10_08 IXYS

获取价格

Power MOSFET Single Die MOSFET
IXFN230N20T IXYS

获取价格

GigaMOS Power MOSFET
IXFN230N20T LITTELFUSE

获取价格

沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低
IXFN23N100 IXYS

获取价格

HiPerFET-TM Power MOSFET
IXFN240N15T2 IXYS

获取价格

GigaMOS TrenchT2 HiperFET Power MOSFET
IXFN240N15T2 LITTELFUSE

获取价格

这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能