Datasheet > IXFN230N10_08

IXFN230N10_08

更新时间： 2024-11-18 11:14:03

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	136K
描述
Power MOSFET Single Die MOSFET

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中文翻译

获取价格

数据手册

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IXFN230N10_08 数据手册

Power MOSFET

Single Die MOSFET

V_DSS= 100V

I_D25= 230A

R_DS(on)≤ 6.0mΩ

IXFN230N10

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t_rr

t_rr

≤ 250ns

miniBLOC, SOT-227 B

E153432

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

100

V_GSS

V_GSM

Continuous

Transient

±20

±30

I_D25

T_C= 25°C, Chip capability

230

200

920

I_L(RMS)

I_DM

External lead current limit

T_C= 25°C, pulse width limited by T_JM

G = Gate

S = Source

D = Drain

I_A

T_C= 25°C

100

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

E_AS

dV/dt

P_d

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

Features

700

• International standard package

• miniBLOC, with Aluminium nitride

isolation

• Low R_{DS (on)}HDMOS^TMprocess

• Rugged polysilicon gate cell structure

• Avalanche rated

T_J

-55 ... +150

150

°C

T_JM

T_stg

V_ISOL

-55 ... +150

50/60 Hz, RMS t = 1min

2500

3000

I_ISOL≤ 1mA

t = 1s

M_d

Mounting torque

Terminal connection torque

1.5/13

1.3/11.5

Nm/lb.in.

• Guaranteed FBSOA

• Low package inductance

• Fast intrinsic Rectifier

Weight

Advantages

• Easy to mount

• Space savings

• High power density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min.

100

2.0

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= ±20V, V_DS= 0V

Applications

4.0

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode

power supplies

±200

I_DSS

V_DS= V_DSS

V_GS= 0V

100

μA

T_J= 125°C

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

6.0 mΩ

• DC choppers

• Temperature and lighting controls

DS98548F(12/08)

12 3 4 5

中文翻译

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