Datasheet > IXFN210N20P

IXFN210N20P

更新时间： 2024-11-05 11:14:03

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	123K
描述
Polar HiPerFET

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中文翻译

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数据手册
替代型号

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IXFN210N20P 数据手册

Polar^TMHiPerFET^TM

Power MOSFET

V_DSS= 200V

I_D25= 188A

IXFN210N20P

R_DS(on)≤ 10.5mΩ

t_rr

≤ 200ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

miniBLOC

E153432

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 175°C

T_J= 25°C to 175°C, R_GS= 1MΩ

200

V_GSS

V_GSM

Continuous

Transient

±20

± 30

I_D25

I_DM

T_C= 25°C

188

600

G = Gate

S = Source

D = Drain

T_C= 25°C, Pulse Width Limited by T_JM

I_A

E_AS

T_C= 25°C

105

Either Source Terminal S can be used as

the Source Terminal or the Kelvin Source

(Gate Return) Terminal.

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 175°C

T_C= 25°C

V/ns

1070

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +175

°C

Features

^zInternational Standard Package

^zminiBLOC, with Aluminium Nitride

Isolation

T_L

1.6mm (0.062 in.) from Case for 10s

300

°C

V_ISOL

50/60 Hz, RMS

t = 1min

2500

3000

^zLow Package Inductance

Avalanche Rated

I_ISOL≤ 1mA

t = 1s

M_d

Mounting Torque

Terminal Connection Torque

1.5/13

1.3/11.5

Nm/lb.in.

^zLow R_DS(ON)and Q_G

^zFast Intrinsic Diode

Weight

Advantages

^zEasy to Mount

^zSpace Savings

^zHigh Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= ±20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

200

Applications

2.5

4.5

^zDC-DC Coverters

^zBattery Chargers

±200

^zSwitch-Mode and Resonant-Mode

Power Supplies

I_DSS

μA

T_J= 150°C

^zDC Choppers

^zAC and DC Motor Drives

^zUninterrupted Power Supplies

^zHigh Speed Power Switching

Applications

R_DS(on)

V_GS= 10V, I_D= 105A, Note 1

10.5 mΩ

DS100019A(05/10)

12 3 4 5

中文翻译

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IXFN210N20P 替代型号

型号	品牌	替代类型	描述	数据表
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