Datasheet > IXFN170N65X2

IXFN170N65X2

更新时间： 2024-11-18 21:21:23

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	131K
描述
Power Field-Effect Transistor

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中文翻译

获取价格

技术参数
数据手册

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IXFN170N65X2 技术参数

生命周期：	Transferred	Reach Compliance Code：	compliant
风险等级：	8.36	Base Number Matches：	1

IXFN170N65X2 数据手册

X2-Class HiPerFET^TM

Power MOSFET

V_DSS= 650V

I_D25= 170A

R_DS(on) 13m

IXFN170N65X2

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

miniBLOC, SOT-227

E153432

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

650

V_GSS

V_GSM

Continuous

Transient

 30

 40

I_D25

I_DM

T_C= 25C

170

340

T_C= 25C, Pulse Width Limited by T_JM

G = Gate

S = Source

D = Drain

I_A

E_AS

T_C= 25C

P_D

T_C= 25C

1170

dv/dt

I_S I_DM, V_DD V_DSS, T_J 150°C

V/ns

Features

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

C



International Standard Package

miniBLOC, with Aluminium Nitride

Isolation

Isolation Voltage 2500 V~

High Current Handling Capability

Fast Intrinsic Diode



V_ISOL

50/60 Hz, RMS

I_ISOL 1mA

t = 1 minute

t = 1 second

2500

3000



M_d

Mounting Torque

Terminal Connection Torque

1.5/13

1.3/11.5

Nm/lb.in



Avalanche Rated

Low R_DS(on)

Weight

Advantages



High Power Density

Easy to Mount

Space Savings



Symbol

Test Conditions

Characteristic Values



(T_J= 25C Unless Otherwise Specified)

Min.

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS=  30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

650

Applications

3.5

5.0



Switch-Mode and Resonant-Mode

200 nA

Power Supplies



DC-DC Converters

PFC Circuits

AC and DC Motor Drives

Robotics and Servo Controls

I_DSS

50 A

5 mA



T_J= 125C



R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

13 m

DS100692A(03/16)

12 3 4 5

中文翻译

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