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IXFN200N07 PDF预览

IXFN200N07

更新时间: 2024-11-06 14:56:55
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
3页 174K
描述
功能与特色: 应用: 优点:

IXFN200N07 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:FLANGE MOUNT, R-PUFM-X4Reach Compliance Code:compliant
风险等级:5.37Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):2000 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:70 V最大漏极电流 (Abs) (ID):200 A
最大漏极电流 (ID):200 A最大漏源导通电阻:0.006 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PUFM-X4
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL功耗环境最大值:520 W
最大功率耗散 (Abs):520 W最大脉冲漏极电流 (IDM):600 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Nickel (Ni)
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFN200N07 数据手册

 浏览型号IXFN200N07的Datasheet PDF文件第2页浏览型号IXFN200N07的Datasheet PDF文件第3页 
HiPerFETTM  
VDSS  
ID25  
RDS(on)  
mΩ  
IXFN200N06  
60 V  
70 V  
200A  
200A  
6
6
Power MOSFETs  
IXFN200N07  
mΩ  
N-Channel Enhancement Mode  
trr 250 ns  
Avalanche Rated, High dv/dt, Low trr  
Symbol  
Test Conditions  
Maximum Ratings  
miniBLOC, SOT-227 B (IXFN)  
E153432  
VDSS  
VDGR  
T = 25°C to 150°C  
N07  
N06  
70  
60  
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ  
S
G
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
S
ID25  
TC= 25°C; Chip capability  
200N06/200N07  
200  
100  
A
A
D
IL(RMS)  
Terminal current limit  
IDM  
IAR  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
600  
100  
A
A
G = Gate  
D = Drain  
S = Source  
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
EAR  
EAS  
T
= 25°C  
30  
2
mJ  
J
TCC = 25°C  
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
,
5
V/ns  
TJ 150°C, RG = 2 Ω  
PD  
TC = 25°C  
520  
W
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
z
International standard packages  
TJM  
Tstg  
z
miniBLOC with Aluminium nitride  
-55 ... +150  
isolation  
VISOL  
50/60 Hz, RMS  
ISOL 1 mA  
t = 1 min  
t = 1 s  
-
-
2500  
3000  
V~  
V~  
z
Low RDS (on) HDMOSTM process  
I
z
Rugged polysilicon gate cell structure  
z
Md  
Mounting torque  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
Unclamped Inductive Switching (UIS)  
Terminal connection torque  
-
rated  
z
Low package inductance  
Weight  
30  
g
z
Fast intrinsic Rectifier  
Applications  
z
DC-DC converters  
z
Synchronous rectification  
Symbol  
VDSS  
Test Conditions  
Characteristic Values  
z
Battery chargers  
(TJ = 25°C, unless otherwise specified)  
z
Switched-mode and resonant-mode  
min. typ. max.  
power supplies  
z
VGS = 0 V, ID = 1 mA  
N06  
N07  
60  
70  
V
V
DC choppers  
z
Temperature and lighting controls  
z
VGS (th)  
IGSS  
IDSS  
VDS = VGS, ID = 8 mA  
VGS = ±20 VDC, VDS = 0  
VDS = 0.8 • VDSS  
2
4
V
Low voltage relays  
±200 nA  
Advantages  
TJ = 25°C  
400 µA  
VGS = 0 V  
TJ = 125°C  
2
mA  
z
Easy to mount  
Space savings  
z
RDS(on)  
VGS = 10 V, I = 0.5 • ID25  
6 mΩ  
Pulse test, tD300 µs, duty cycle d 2 %  
z
High power density  
© 2003 IXYS All rights reserved  
DS97533B(02/03)  

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