Datasheet > IXFN180N20

IXFN180N20

更新时间： 2024-11-19 14:56:47

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
3页	168K
描述
功能与特色: 应用: 优点:

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXFN180N20 数据手册

HiPerFET^TM

Power MOSFET

V_DSS= 200V

I_D25= 180A

R_DS(on) 12.5m

IXFN180N20

t_rr

 250ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

miniBLOC

E153432

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

200

V_DGR

V_GSS

V_GSM

Continuous

Transient

20

30

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

180

720

G = Gate

S = Source

D = Drain

I_A

E_AS

T_C= 25C

Either Source Terminal S can be used as

the Source Terminal or the Kelvin Source

(Gate Return) Terminal.

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150C

T_C= 25C

V/ns

700

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

C

Features



International Standard Package

miniBLOC with Aluminum Nitride



V_ISOL

50/60 Hz, RMS, t = 1minute

2500

3000

Isolation

Avalanche Rated

Low Package Inductance

Fast Intrinsic Rectifier

I_ISOL1mA,

t = 1s



M_d

Mounting Torque for Base Plate

Terminal Connection Torque

1.5/13

1.3/11.5

Nm/lb.in



Low R_DS(on)and Q_G

Weight

Advantages



Easy to Mount

Space Savings



Symbol

Test Conditions

Characteristic Values

Applications

(T_J= 25C Unless Otherwise Specified)

Min.

200

2.0

Typ.

Max.

^DC-DC Converters

^Battery Chargers

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

^Switch-Mode and Resonant-Mode

Power Supplies

4.0

200 nA

^AC Choppers

^Temperature and Lighting Controls

I_DSS

100 A

T_J= 125C

2 mA

R_DS(on)

V_GS= 10V, I_D= 90A, Note 1

12.5 m

DS98551C(6/15)

12 3

中文翻译

下载PDF

与IXFN180N20相关器件

型号	品牌	获取价格	描述	数据表
IXFN180N25T	IXYS	获取价格	GigaMOS Power MOSFET
IXFN180N25T	LITTELFUSE	获取价格	沟槽栅功率MOSFET适用于低电压/高电流应用，所需的RDS(on)极低，因此确保了非常低
IXFN185N10	ETC	获取价格	TRANSISTOR \| MOSFET POWER MODULE \| INDEPENDENT \| 100V V(BR)DSS \| 185A I(D)
IXFN200N06	IXYS	获取价格	HiPerFET Power MOSFETs
IXFN200N07	IXYS	获取价格	HiPerFET Power MOSFETs
IXFN200N07	LITTELFUSE	获取价格	功能与特色: 应用: 优点:
IXFN200N10P	IXYS	获取价格	Polar HiPerFET Power MOSFET
IXFN200N10P	LITTELFUSE	获取价格	功能与特色: 优点: 应用:
IXFN20N120	IXYS	获取价格	HiPerFET Power MOSFETs
IXFN20N120P	IXYS	获取价格	Polar Power MOSFET HiPerFET