Datasheet > IXFN180N15P

IXFN180N15P

更新时间： 2024-11-19 14:56:11

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	220K
描述
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中文翻译

获取价格

数据手册

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IXFN180N15P 数据手册

PolarHT^TMHiPerFET

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

V_DSS= 150 V

I_D25= 150 A

R_DS(on)≤ 11 mΩ

≤ 200 ns

IXFN 180N15P

t_rr

Fast Intrinsic Diode

Symbol

Test Conditions

Maximum Ratings

miniBLOC, SOT-227 B (IXFN)

E153432

V_DSS

V_DGR

T_J= 25° C to 175° C

T_J= 25° C to 175° C; R_GS= 1 MΩ

150

V_DSS

V_GSM

Continuous

Transient

I_D25

T_C=25° C

150

100

380

I_D(RMS)

I_DM

External lead current limit

T_C= 25° C, pulse width limited by T_JM

G = Gate

S = Source

D = Drain

I_AR

T_C=25° C

E_AR

E_AS

T_C=25° C

100

Either Source terminal S can be used as the

Source terminal or the Kelvin Source (gate

return) terminal.

dv/dt

P_D

I_S≤I_DM, di/dt ≤100 A/µs, V_DD≤V_DSS

T_J≤150° C, R_G= 4 Ω

V/ns

T_C=25° C

680

Features

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +150

°C

• International standard package

• Encapsulating epoxy meets

UL94V-0, flammability classification

• miniBLOC with Aluminium nitride

isolation

M_d

Mounting torque

Terminal connection torque (M4)

50/60 Hz

I_ISOL≤1 mA

1.5/13 Nm/lb.in.

2500

3000

V_ISOL

t = 1 min

t = 1 s

Fast recovery diode

Unclamped Inductive Switching (UIS)

T_L

1.6 mm (0.062 in.) from case for 10 s

300

°C

rated

Weight

Low package inductance

- easy to drive and to protect

Symbol

Test Conditions

Characteristic Values

Advantages

(T_J= 25° C, unless otherwise specified)

Min. Typ.

Max.

V_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 4 mA

V_GS= 20 V_DC, V_DS= 0

V_DS= V_DSS,V_GS= 0 V

150

Easy to mount

Space savings

High power density

2.5

5.0

100

I_DSS

500

µA

T_J= 150° C

R_DS(on)

V_GS= 10 V, I_D= 90 A

11 mΩ

Pulse test, t ≤300 µs, duty cycle d ≤ 2 %

DS99241E(01/06)

12 3 4 5 6

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