Datasheet > IXFN180N06

IXFN180N06

更新时间： 2024-11-04 21:53:51

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	191K
描述
HiPerFET Power MOSFETs

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中文翻译

获取价格

数据手册

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IXFN180N06 数据手册

HiPerFET^TM

V_DSS

I_D25

R_DS(on)

IXFN 200 N06

IXFN 180 N07

IXFN 200 N07

60 V

70 V

200 A 6 mW

180 A 7 mW

200 A 6 mW

Power MOSFETs

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t_rr

t_rr£ 250 ns

Symbol

V_DSS

TestConditions

MaximumRatings

miniBLOC, SOT-227 B (IXFN)

E153432

T_J= 25°C to 150°C

N07

N06

N07

N06

V_DGR

T_J= 25°C to 150°C; R_GS= 1 MW

V_GS

Continuous

Transient

±20

±30

V_GSM

I_D25

T_C= 25°C; Chip capability

200N06/200N07

180N07

200

180

100

I_L(RMS)

Terminalcurrentlimit

G = Gate

D = Drain

S = Source

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

I_DM

I_AR

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

600

100

E_AR

E_AS

T_C= 25°C

Features

dv/dt

I_S£ I_DM, di/dt £ 100 A/ms, V_DD£ V_DSS

T_J£ 150°C, R_G= 2 W

V/ns

• Internationalstandardpackages

• miniBLOCwithAluminiumnitride

isolation

P_D

T_C= 25°C

520

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

• Low R_{DS (on)}HDMOS^TMprocess

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

V_ISOL

50/60 Hz, RMS

I_ISOL£ 1 mA

t = 1 min

t = 1 s

2500

3000

• Low package inductance

• Fast intrinsic Rectifier

M_d

Mountingtorque

Terminalconnectiontorque

1.5/13Nm/lb.in.

Applications

Weight

• DC-DC converters

• Synchronousrectification

• Battery chargers

• Switched-modeandresonant-mode

powersupplies

Symbol

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

• DC choppers

• Temperatureandlightingcontrols

• Low voltage relays

V_DSS

V_GS= 0 V, I_D= 1 mA

N06

N07

V_{GS (th)}

I_GSS

V_DS= V_GS, I_D= 8 mA

V_GS= ±20 V_DC, V_DS= 0

V_DS= 0.8 • V_DSS

±200 nA

400 mA

Advantages

I_DSS

T_J= 25°C

V_GS= 0 V

V_GS= 10 V, I_D= 0.5 • I_D25

Pulse test, t £ 300 ms, duty cycle d £ 2 %

T_J= 125°C

• Easy to mount

• Space savings

• High power density

R_DS(on)

200N06/200N07

180N07

IXYS reserves the right to change limits, test conditions, and dimensions.

97533A(9/99)

1 - 4

12 3 4

中文翻译

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