Datasheet > IXFN170N30P

IXFN170N30P

更新时间： 2024-11-05 11:14:03

品牌	Logo	应用领域
IXYS		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
5页	118K
描述
Polar Power MOSFET HiPerFET

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数据手册
替代型号

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IXFN170N30P 数据手册

Preliminary Technical Information

Polar^TMPower MOSFET

V_DSS= 300V

I_D25= 138A

R_DS(on)≤ 18mΩ

≤ 200ns

IXFN170N30P

HiPerFET^TM

N-Channel Enhancement Mode

Avalanche Rated

t_rr

Fast Intrinsic Diode

miniBLOC, SOT-227 B

E153432

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

300

V_DGR

T_J= 25°C to 150°C, R_GS= 1MΩ

V_GSS

V_GSM

Continuous

Transient

±20

± 30

I_D25

I_LRMS

I_DM

T_C= 25°C

External lead current limit

T_C= 25°C, pulse width limited by T_JM

138

100

500

G = Gate

S = Source

D = Drain

I_A

T_C= 25°C

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

E_AS

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

890

Features

T_J

-55 ... +150

150

°C

• Fast intrinsic diode

• Avalanche Rated

• Unclamped Inductive Switching (UIS)

rated

T_JM

T_stg

-55 ... +150

T_L

1.6mm (0.062 in.) from case for 10s

300

°C

• Very low R_thresults high power

dissipation

• Low R_DS(ON)and Q_G

• Low package inductance

V_ISOL

50/60 Hz, RMS

t = 1min

2500

3000

I_ISOL≤ 1mA

t = 1s

M_d

Mounting torque

Terminal connection torque

1.5/13

1.3/11.5

Nm/lb.in.

Advantages

• Low gate charge results in simple

drive requirement

Weight

• Improved Gate, Avalanche and

dynamic dv/dt ruggedness

• High power density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min.

Typ.

Max.

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 1mA

V_GS= ±20V, V_DS= 0V

300

• DC-DC coverters

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• AC and DC motor control

• Uninterrupted power supplies

• High speed power switching

applications

2.5

4.5

±200

I_DSS

V_DS= V_DSS

V_GS= 0V

μA

1.5 mA

T_J= 125°C

R_DS(on)

V_GS= 10V, I_D= 85A, Note 1

18 mΩ

DS100001(06/08)

12 3 4 5

中文翻译

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IXFN170N30P 替代型号

型号	品牌	替代类型	描述	数据表
IXFN160N30T	IXYS	类似代替	GigaMOS Power MOSFET

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