5秒后页面跳转
IXFN160N30T PDF预览

IXFN160N30T

更新时间: 2024-11-18 11:14:03
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
5页 142K
描述
GigaMOS Power MOSFET

IXFN160N30T 数据手册

 浏览型号IXFN160N30T的Datasheet PDF文件第2页浏览型号IXFN160N30T的Datasheet PDF文件第3页浏览型号IXFN160N30T的Datasheet PDF文件第4页浏览型号IXFN160N30T的Datasheet PDF文件第5页 
Advance Technical Information  
GigaMOSTM  
Power MOSFET  
VDSS = 300V  
ID25 = 130A  
RDS(on) 19mΩ  
IXFN160N30T  
trr  
200ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
miniBLOC, SOT-227  
E153432  
S
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
300  
300  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
S
D
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
130  
440  
A
A
G = Gate  
S = Source  
D = Drain  
IA  
TC = 25°C  
TC = 25°C  
40  
3
A
J
EAS  
Either Source Terminal S can be used as  
the Source Terminal or the Kelvin Source  
( Gate Return ) Terminal.  
dV/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
20  
V/ns  
W
900  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
z International Standard Package  
z miniBLOC, with Aluminium Nitride  
Isolation  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z Isolation voltage 2500 V~  
z High Current Handling Capability  
z Fast Intrinsic Diode  
VISOL  
50/60 Hz, RMS  
IISOL 1mA  
t = 1 minute  
t = 1 second  
2500  
3000  
V~  
V~  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
z Avalanche Rated  
z
Low RDS(on)  
Weight  
30  
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
300  
2.5  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z DC-DC Converters  
z Battery Chargers  
5.0  
±200 nA  
z Switched-Mode and Resonant-Mode  
Power Supplies  
IDSS  
50 µA  
3 mA  
z DC Choppers  
z AC Motor Drives  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 60A, Note 1  
19 mΩ  
z Uninterruptible Power Supplies  
z High Speed Power Switching  
Applications  
DS100128(03/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  

与IXFN160N30T相关器件

型号 品牌 获取价格 描述 数据表
IXFN16N100 IXYS

获取价格

HIPERFET Power MOSFTETs
IXFN170N10 IXYS

获取价格

HiPerFET Power MOSFET
IXFN170N10 LITTELFUSE

获取价格

功能与特色: 应用: 优点:
IXFN170N25X3 LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXFN170N30P IXYS

获取价格

Polar Power MOSFET HiPerFET
IXFN170N30P LITTELFUSE

获取价格

功能与特色: 优点: 应用:
IXFN170N65X2 LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXFN170N65X2 IXYS

获取价格

Power Field-Effect Transistor
IXFN17N80 IXYS

获取价格

HIPERFET Power MOSFTETs
IXFN180N06 IXYS

获取价格

HiPerFET Power MOSFETs