Datasheet > IXFN160N30T

IXFN160N30T

更新时间： 2024-09-27 11:14:03

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	142K
描述
GigaMOS Power MOSFET

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中文翻译

获取价格

数据手册

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IXFN160N30T 数据手册

Advance Technical Information

GigaMOS^TM

Power MOSFET

V_DSS= 300V

I_D25= 130A

R_DS(on)≤ 19mΩ

IXFN160N30T

t_rr

≤ 200ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

miniBLOC, SOT-227

E153432

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

300

V_DGR

V_GSS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

130

440

G = Gate

S = Source

D = Drain

I_A

T_C= 25°C

E_AS

Either Source Terminal S can be used as

the Source Terminal or the Kelvin Source

( Gate Return ) Terminal.

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

900

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

Features

^zInternational Standard Package

^zminiBLOC, with Aluminium Nitride

Isolation

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

^zIsolation voltage 2500 V~

^zHigh Current Handling Capability

^zFast Intrinsic Diode

V_ISOL

50/60 Hz, RMS

I_ISOL≤ 1mA

t = 1 minute

t = 1 second

2500

3000

M_d

Mounting Torque

Terminal Connection Torque

1.5/13

1.3/11.5

Nm/lb.in.

^zAvalanche Rated

Low R_DS(on)

Weight

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

300

2.5

Typ.

Max.

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= ±20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

^zDC-DC Converters

^zBattery Chargers

5.0

±200 nA

^zSwitched-Mode and Resonant-Mode

Power Supplies

I_DSS

50 µA

3 mA

^zDC Choppers

^zAC Motor Drives

T_J= 125°C

R_DS(on)

V_GS= 10V, I_D= 60A, Note 1

19 mΩ

^zUninterruptible Power Supplies

^zHigh Speed Power Switching

Applications

DS100128(03/09)

12 3 4 5

中文翻译

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