Datasheet > IXFN170N10

IXFN170N10

更新时间： 2024-02-23 09:10:48

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
5页	224K
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数据手册

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IXFN170N10 数据手册

HiPerFET^TM

Power MOSFET

V_DSS

I_D25

R_DS(on)

t_rr

IXFN170N10

IXFK170N10

100V 170A 10mW

200ns

Single MOSFET Die

TO-264 AA (IXFK)

Preliminary data

Symbol

TestConditions

MaximumRatings

IXFK

IXFN

170N10

D (TAB)

V_DSS

V_DGR

T_J= 25°C to 150°C

100

V_GS

Continuous

Transient

±20

±30

±20

±30

V_GSM

I_D25

miniBLOC, SOT-227 B (IXFN)

E153432

T_C= 25°C

T_C= 125°C

T_C= 25°C

170

680

170

680

170

I_D125

I_DM

I_AR

E_AR

T_C= 25°C

dv/dt

I_S£ I_DM, di/dt £ 100 A/ms, V_DD£ V_DSS

T_J£ 150°C, R_G= 2 W

V/ns

P_D

T_C= 25°C

560

600 W

°C

G = Gate

S = Source

D = Drain

TAB = Drain

T_J

T_JM

T_stg

-55 ... +150°C

150

-55 ... +150°C

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

T_L

1.6 mm (0.063 in) from case for 10 s

300

N/A

°C

Features

· Internationalstandardpackages

· Encapsulating epoxy meets

UL94V-0,flammabilityclassification

· miniBLOC withAluminiumnitride

isolation

V_ISOL

50/60 Hz, RMS

I_ISOL£ 1 mA

t = 1 min

t = 1 s

N/A

2500

3000

M_d

Mountingtorque

Terminalconnectiontorque

0.9/6

N/A

1.5/13 Nm/lb.in.

· Low R_{DS (on)}HDMOS^TMprocess

· Rugged polysilicon gate cell structure

· Unclamped Inductive Switching (UIS)

rated

Weight

· Low package inductance

· Fast intrinsic Rectifier

Symbol

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

Min.

100

Typ.

0.077

-0.183

Max.

Applications

V_DSS

V_GS= 0 V, I_D= 3mA

· DC-DC converters

· Synchronousrectification

· Battery chargers

· Switched-modeandresonant-mode

powersupplies

V_DSStemperature coefficient

%/K

V_GS(th)

V_DS= V_GS, I_D= 8mA

V_GS(th)temperature coefficient

%/K

· DC choppers

· Temperatureandlightingcontrols

· Low voltage relays

I_GSS

I_DSS

V_GS= ±20V, V_GS= 0V

±200

V_DS= 0.8 • V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

400

Advantages

R_DS(on)

V_GS= 10 V, I_D= 0.5 • I_D25

Pulse test, t £ 300 ms,

duty cycle d £ 2 %

· Easy to mount

· Space savings

· High power density

IXYS reserves the right to change limits, test conditions, and dimensions.

97505D(7/00)

1 - 4

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