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IXFN170N65X2 PDF预览

IXFN170N65X2

更新时间: 2024-11-05 20:08:35
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 133K
描述
Power Field-Effect Transistor,

IXFN170N65X2 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.37
Base Number Matches:1

IXFN170N65X2 数据手册

 浏览型号IXFN170N65X2的Datasheet PDF文件第2页浏览型号IXFN170N65X2的Datasheet PDF文件第3页浏览型号IXFN170N65X2的Datasheet PDF文件第4页浏览型号IXFN170N65X2的Datasheet PDF文件第5页浏览型号IXFN170N65X2的Datasheet PDF文件第6页 
X2-Class HiPerFETTM  
Power MOSFET  
VDSS = 650V  
ID25 = 170A  
RDS(on) 13m  
IXFN170N65X2  
D
S
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
G
S
miniBLOC, SOT-227  
E153432  
S
G
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
650  
650  
V
V
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
S
D
ID25  
IDM  
TC = 25C  
170  
340  
A
A
TC = 25C, Pulse Width Limited by TJM  
G = Gate  
S = Source  
D = Drain  
IA  
EAS  
TC = 25C  
TC = 25C  
15  
5
A
J
PD  
TC = 25C  
1170  
50  
W
dv/dt  
IS IDM, VDD VDSS, TJ 150°C  
V/ns  
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
International Standard Package  
miniBLOC, with Aluminium Nitride  
Isolation  
Isolation Voltage 2500 V~  
High Current Handling Capability  
Fast Intrinsic Diode  
VISOL  
50/60 Hz, RMS  
IISOL 1mA  
t = 1 minute  
t = 1 second  
2500  
3000  
V~  
V~  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in  
Nm/lb.in  
Avalanche Rated  
Low RDS(on)  
Weight  
30  
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
650  
V
V
Applications  
3.5  
5.0  
Switch-Mode and Resonant-Mode  
200 nA  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
IDSS  
50 A  
5 mA  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
13 m  
© 2016 IXYS CORPORATION, All Rights Reserved  
DS100692A(03/16)  

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