Datasheet > MMIX1F44N100Q3

MMIX1F44N100Q3

更新时间： 2024-11-24 11:58:35

品牌	Logo	应用领域
IXYS		光电二极管
页数	文件大小	规格书
2页	2833K
描述
1000V Q3-Class HiPerFETâ¢ Power MOSFET In SMPD Technology

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MMIX1F44N100Q3 数据手册

POWER

N E W P R O D U C T B R I E F

1000V Q3-Class HiPerFET™ Power MOSFET In SMPD Technology

MORE POWER, LESS PACKAGE (ultra-low proﬁle, energy eﬃcient, and rugged)

August 2012

OVERVIEW

The 1000V/30A Q3-Class HiPerFET^TMPower MOSFET is now available in the IXYS

Surface Mount Power Device (SMPD) package. The device can be easily surface-

mounted on a Printed Circuit Board (PCB), using a standard pick-and-place and reﬂow

soldering process. No costly screws, cables, bus-bars or hand soldered contacts are

needed. Weighing only 8g, it is much lighter (typically by 50%) than comparable

convenꢀonal power modules, enabling a lower carbon footprint for end users. This is

one of the key “green” iniꢀaꢀves of IXYS Corporaꢀon as it develops new products

lighter in weight for the Cleantech industry.

Due to its new compact and high performance SMPD package, the MMIX1F44N100Q3

MOSFET exhibits a low package inductance and high current handling capability. A

ceramic isolaꢀon of 2500V is achieved with the Direct Copper Bond (DCB) substrate

technology–an electrically isolated tab is provided for heat sinking.

The Q3-Class is a direct result of combining the latest PolarHV^TMtechnology plaꢁorm

with advanced double metal construcꢀon, resulꢀng in an opꢀmal combinaꢀon of low

on-state resistance (R_DS(on)) and gate charge (Q_g). Addiꢀonally the device has a low

gate-to-drain (Miller) charge (Q_gd) and low intrinsic gate resistance (R_Gi). These

enhancements lower gate drive requirements and switching losses.

What’s more, the power switching capability and ruggedness of the device are further

enhanced by the proven HiPerFET^TMprocess, yielding a power MOSFET with a fast

intrinsic recꢀﬁer; the result is a low reverse recovery charge (Q_rr), an ability to sustain

hard-switching operaꢀons, and an excellent commutaꢀng dv/dt raꢀng (up to 50V/ns).

These featured diode properꢀes translate into a faster transient response, an increase

in power eﬃciency, and higher operaꢀng frequencies. Other beneﬁcial product

features include a low juncꢀon-to-case thermal resistance (R_thJC(max)) of 0.18 °C/W and

high avalanche energy (E_AS) raꢀng of 4 Joules.

The new Power MOSFET is well suited for such applicaꢀons as, among others, DC-DC

converters, baꢂery chargers, switch-mode and resonant power supplies, DC choppers,

temperature and lighꢀng controls, and high frequency plasma generators. In parꢀcu-

lar, the enhanced dv/dt raꢀng and high avalanche energy capability mean addiꢀonal

safety margins for stresses encountered in high voltage industrial switching applica-

ꢀons, improving the long-term reliability of these systems.

FEATURES

SMPD ADVANTAGES

APPLICATIONS

DC-DC converters

Baꢂery chargers

Switching and resonant power Supplies

DC choppers

Low R_DS(on)and gate charge (Q_g)

Low intrinsic gate resistance

Fast intrinsic recꢀﬁer

Ultra-low and compact package proﬁle

(5.3mm height x 24.8mm length x 32.3mm width)

Surface mountable via standard reﬂow process

Low package weight (8g)

Excellent dv/dt performance

High power density

High avalanche energy raꢀng

2500V ceramic isolaꢀon (DCB)

Low package inductance

Temperature and lighꢀng controls

Excellent thermal performance

High power cycling capability

www.ixys.com

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与MMIX1F44N100Q3相关器件

型号	品牌	获取价格	描述	数据表
MMIX1F520N075T2	IXYS	获取价格	Power Field-Effect Transistor, 500A I(D), 75V, 0.0016ohm, 1-Element, N-Channel, Silicon, M
MMIX1F520N075T2	LITTELFUSE	获取价格	SMPD封装重仅8g，相比传统的电源模块更轻（通常要轻50%），因此可打造重量更轻的电源系
MMIX1G120N120A3V1	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel,
MMIX1G120N120A3V1	IXYS	获取价格	Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel,
MMIX1G320N60B3	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel,
MMIX1G320N60B3	IXYS	获取价格	Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel,
MMIX1G75N250	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor, 110A I(C), 2500V V(BR)CES, N-Channel, PLASTIC PACKAGE-2
MMIX1G75N250	IXYS	获取价格	Insulated Gate Bipolar Transistor, 110A I(C), 2500V V(BR)CES, N-Channel, PLASTIC PACKAGE-2
MMIX1H60N150V1	LITTELFUSE	获取价格	专为大功率脉冲和电容放电应用而设计? 由施加在栅极的电压接通（MOS结构
MMIX1T132N50P3	LITTELFUSE	获取价格	SMPD封装重仅8g，相比传统的电源模块更轻（通常要轻50%），因此可打造重量更轻的电源系

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