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MMIX1X100N60B3H1 PDF预览

MMIX1X100N60B3H1

更新时间: 2024-11-19 14:56:55
品牌 Logo 应用领域
力特 - LITTELFUSE 光电二极管
页数 文件大小 规格书
9页 325K
描述
我们的表面安装式功率器件(SMPD)封装技术在ISOPLUS?封装组合基础上有所扩展,纳入了可按标准表面安装式(SMD)焊接工艺组装的模块,并可随时取放,在客户现有的SMD组装线上组装。 我们的

MMIX1X100N60B3H1 数据手册

 浏览型号MMIX1X100N60B3H1的Datasheet PDF文件第2页浏览型号MMIX1X100N60B3H1的Datasheet PDF文件第3页浏览型号MMIX1X100N60B3H1的Datasheet PDF文件第4页浏览型号MMIX1X100N60B3H1的Datasheet PDF文件第5页浏览型号MMIX1X100N60B3H1的Datasheet PDF文件第6页浏览型号MMIX1X100N60B3H1的Datasheet PDF文件第7页 
XPTTM 600V IGBT  
GenX3TM w/ Diode  
VCES = 600V  
IC110 = 68A  
VCE(sat) 1.80V  
MMIX1X100N60B3H1  
(Electrically Isolated Tab)  
Extreme Light Punch Through  
IGBT for 10-30kHz Switching  
C
G
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
E
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
Continuous  
600  
600  
±20  
±30  
145  
V
V
V
V
A
VCGR  
VGES  
Isolated Tab  
C
VGEM  
IC25  
IC110  
IF90  
Transient  
TC = 25°C (Chip Capability)  
TC = 110°C  
TC = 90°C  
68  
54  
A
A
E
ICM  
TC = 25°C, 1ms  
440  
A
G
IA  
EAS  
TC = 25°C  
TC = 25°C  
50  
A
600  
mJ  
G = Gate  
E
= Emitter  
C = Collector  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 2Ω  
Clamped Inductive Load  
ICM = 200  
A
μs  
W
(RBSOA)  
VCE VCES  
Features  
tsc  
VGE = 15V, VCE = 360V, TJ = 150°C  
10  
(SCSOA)  
RG = 10Ω, Non Repetitive  
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
Isolated Mounting Surface  
2500V~ Electrical Isolation  
Optimized for 10-30kHz Switching  
Square RBSOA  
FBSOA  
Avalanche Rated  
Short Circuit Capability  
Anti-Parallel Ultra Fast Diode  
High Current Handling Capability  
PC  
TC = 25°C  
400  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10s  
300  
260  
°C  
°C  
VISOL  
FC  
50/60Hz, 1 minute  
Mounting Force  
2500  
50..200/11..45  
8
V~  
N/lb.  
g
Weight  
Advantages  
High Power Density  
Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
Applications  
5.5  
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
50 μA  
TJ = 125°C  
4 mA  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = 70A, VGE = 15V, Note 1  
1.50  
1.77  
1.80  
V
V
TJ = 150°C  
DS100377C(04/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  

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