Datasheet > MMIX4B22N300

MMIX4B22N300

更新时间： 2024-11-06 14:56:47

品牌	Logo	应用领域
力特 - LITTELFUSE		光电二极管
页数	文件大小	规格书
6页	258K
描述
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中文翻译

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数据手册

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MMIX4B22N300 数据手册

High Voltage, High Gain

BIMOSFET^TMMonolithic

Bipolar MOS Transistor

V_CES

I_C90

= 3000V

= 22A

MMIX4B22N300

V_CE(sat) 2.7V

E2C4

E1C3

(Electrically Isolated Tab)

E3E4

E2C4

Symbol

V_CES

Test Conditions

Maximum Ratings

E3E4

T_J= 25°C to 150°C

3000

E1C3

V_CGR

T_J= 25°C to 150°C, R_GE= 1M

V_GES

V_GEM

Continuous

Transient

± 20

± 30

Isolated Tab

E3E4

I_C25

I_C90

I_CM

T_C= 25°C

E2C4

T_C= 90°C

T_C= 25°C, 1ms

165

SSOA

(RBSOA)

V_GE= 15V, T_VJ= 125°C, R_G= 15

Clamped Inductive Load

I_CM= 180

V_CES 1500

E1C3

T_SC

V_GE= 15V, T_J= 125°C,

(SCSOA)

R_G= 52, V_CE=1500V, Non-Repetitive

μs

G = Gate

C = Collector

= Emitter

P_C

T_C= 25°C

150

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

Features

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

^Silicon Chip on Direct-Copper Bond

(DCB) Substrate

F_C

Mounting Force

50..200 / 11..45

N/lb

^Isolated Mounting Surface

^4000V~ Electrical Isolation

V_ISOL

Weight

50/60Hz, 1 minute

4000



High Blocking Voltage

^High Peak Current Capability

^Low Saturation Voltage

Symbol Test Conditions

(T_J= 25°C Unless Otherwise Specified)

Characteristic Values

Advantages

Min.

3000

3.0

Typ.

Max.

^Low Gate Drive Requirement

^High Power Density

BV_CES

V_GE(th)

I_CES

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

V_CE= V_CES, V_GE= 0V

5.0

35 μA

Note 2, T_J= 125°C

1.5 mA

Applications

I_GES

V_CE= 0V, V_GE= ± 20V

±100 nA

^Switch-Mode and Resonant-Mode

Power Supplies

^Capacitor Discharge Circuits

V_CE(sat)

I_C= 22A, V_GE= 15V, Note 1

2.2

2.7

T_J= 125°C

DS100627A(5/18)

12 3 4 5 6

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