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MMIX4B22N300 PDF预览

MMIX4B22N300

更新时间: 2024-11-19 14:56:47
品牌 Logo 应用领域
力特 - LITTELFUSE 光电二极管
页数 文件大小 规格书
6页 258K
描述
我们的SMPD产品系列在拓扑或硅品种方面提供丰富的标准选择。 凭借简单易用性和经过优化的生产工艺,它可快速上市,为需要有效区分不同芯片和电路组合的客户实现快速产品研发。 可采用一种高度可靠的封装成

MMIX4B22N300 数据手册

 浏览型号MMIX4B22N300的Datasheet PDF文件第2页浏览型号MMIX4B22N300的Datasheet PDF文件第3页浏览型号MMIX4B22N300的Datasheet PDF文件第4页浏览型号MMIX4B22N300的Datasheet PDF文件第5页浏览型号MMIX4B22N300的Datasheet PDF文件第6页 
High Voltage, High Gain  
BIMOSFETTM Monolithic  
Bipolar MOS Transistor  
VCES  
IC90  
= 3000V  
= 22A  
MMIX4B22N300  
C2  
C1  
VCE(sat)  2.7V  
G1  
G2  
E2C4  
E1C3  
(Electrically Isolated Tab)  
G4  
G3  
C2  
G2  
E3E4  
E2C4  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
G4  
E3E4  
C1  
TJ = 25°C to 150°C  
3000  
3000  
V
V
G1  
E1C3  
VCGR  
TJ = 25°C to 150°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
G3  
Isolated Tab  
E3E4  
G4  
IC25  
IC90  
ICM  
TC = 25°C  
38  
22  
A
A
A
E2C4  
G2  
TC = 90°C  
TC = 25°C, 1ms  
165  
C2  
G3  
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 125°C, RG = 15  
Clamped Inductive Load  
ICM = 180  
VCES 1500  
A
V
E1C3  
G1  
TSC  
VGE = 15V, TJ = 125°C,  
C1  
(SCSOA)  
RG = 52, VCE =1500V, Non-Repetitive  
10  
μs  
G = Gate  
C = Collector  
E
= Emitter  
PC  
TC = 25°C  
150  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
FC  
Mounting Force  
50..200 / 11..45  
N/lb  
V~  
g
Isolated Mounting Surface  
4000V~ Electrical Isolation  
VISOL  
Weight  
50/60Hz, 1 minute  
4000  
8
High Blocking Voltage  
High Peak Current Capability  
Low Saturation Voltage  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Advantages  
Min.  
3000  
3.0  
Typ.  
Max.  
Low Gate Drive Requirement  
High Power Density  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
5.0  
35 μA  
Note 2, TJ = 125°C  
1.5 mA  
Applications  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
Switch-Mode and Resonant-Mode  
Power Supplies  
Capacitor Discharge Circuits  
VCE(sat)  
IC = 22A, VGE = 15V, Note 1  
2.2  
2.7  
2.7  
V
V
TJ = 125°C  
© 2018 IXYS CORPORATION, All Rights Reserved  
DS100627A(5/18)  

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