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MMJT350T1 PDF预览

MMJT350T1

更新时间: 2024-11-04 22:29:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 61K
描述
Bipolar Power Transistors

MMJT350T1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-261AA包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.59
外壳连接:COLLECTOR最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:300 V配置:SINGLE
最小直流电流增益 (hFE):20JEDEC-95代码:TO-261AA
JESD-30 代码:R-PDSO-G4JESD-609代码:e0
湿度敏感等级:3元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
极性/信道类型:PNP最大功率耗散 (Abs):2.75 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON

MMJT350T1 数据手册

 浏览型号MMJT350T1的Datasheet PDF文件第2页浏览型号MMJT350T1的Datasheet PDF文件第3页浏览型号MMJT350T1的Datasheet PDF文件第4页 
MMJT350T1  
Bipolar Power Transistors  
PNP Silicon  
. . . designed for use in line−operated applications such as low  
power, line−operated series pass and switching regulators requiring  
PNP capability.  
http://onsemi.com  
High Collector−Emitter Sustaining Voltage −  
0.5 AMPERE  
POWER TRANSISTOR  
PNP SILICON  
V
= 300 Vdc @ I  
1.0 mAdc  
CEO(sus)  
C
=
Excellent DC Current Gain −  
h
FE  
= 30−240 @ I  
= 50 mAdc  
C
300 VOLTS  
2.75 WATTS  
Epoxy Meets UL94, V−0 @ 0.125 in  
ESD Ratings: Human Body Model, 3B; > 8000 V  
C 2,4  
Machine Model, C; > 400 V  
B 1  
E 3  
Schematic  
MARKING  
DIAGRAM  
AYM  
T350  
SOT−223  
CASE 318E  
Style 1  
T350  
A
Y
= Specific Device Code  
= Assembly Location  
= Last Digit of Year  
= Month Code  
M
4
C
B
C
E
3
1
2
Top View Pinout  
ORDERING INFORMATION  
Device  
MMJT350T1  
Package  
Shipping  
SOT−223  
1000 / Tape &  
Reel  
Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
October, 2003 − Rev. 1  
MMJT350T1/D  

MMJT350T1 替代型号

型号 品牌 替代类型 描述 数据表
MMJT350T1G ONSEMI

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