5秒后页面跳转
MMIX1X200N60B3 PDF预览

MMIX1X200N60B3

更新时间: 2024-11-06 14:56:15
品牌 Logo 应用领域
力特 - LITTELFUSE 光电二极管
页数 文件大小 规格书
8页 260K
描述
我们的表面安装式功率器件(SMPD)封装技术在ISOPLUS?封装组合基础上有所扩展,纳入了可按标准表面安装式(SMD)焊接工艺组装的模块,并可随时取放,在客户现有的SMD组装线上组装。 我们的

MMIX1X200N60B3 数据手册

 浏览型号MMIX1X200N60B3的Datasheet PDF文件第2页浏览型号MMIX1X200N60B3的Datasheet PDF文件第3页浏览型号MMIX1X200N60B3的Datasheet PDF文件第4页浏览型号MMIX1X200N60B3的Datasheet PDF文件第5页浏览型号MMIX1X200N60B3的Datasheet PDF文件第6页浏览型号MMIX1X200N60B3的Datasheet PDF文件第7页 
Preliminary Technical Information  
XPTTM 600V IGBT  
GenX3TM  
MMIX1X200N60B3  
VCES = 600V  
IC110 = 120A  
VCE(sat) 1.7V  
tfi(typ) = 110ns  
(Electrically Isolated Tab)  
Extreme Light Punch Through  
IGBT for 10-30kHz Switching  
C
G
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 175°C  
600  
600  
V
V
E
TJ = 25°C to 175°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
Isolated Tab  
C
IC25  
IC110  
TC = 25°C (Chip Capability)  
TC = 110°C  
223  
120  
A
A
ICM  
TC = 25°C, 1ms  
1000  
A
E
IA  
EAS  
TC = 25°C  
TC = 25°C  
100  
1
A
J
G
SSOA  
VGE = 15V, TVJ = 150°C, RG = 1Ω  
Clamped Inductive Load  
ICM = 400  
A
μs  
W
(RBSOA)  
@VCE VCES  
G = Gate  
E
= Emitter  
C = Collector  
Features  
z
tsc  
VGE = 15V, VCE = 360V, TJ = 150°C  
10  
(SCSOA)  
RG = 10Ω, Non Repetitive  
PC  
TC = 25°C  
625  
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
Isolated Mounting Surface  
2500V~ Electrical Isolation  
Optimized for Low Conduction and  
Switching Losses  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
z
z
z
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10  
300  
260  
°C  
°C  
z
z
z
z
Avalanche Rated  
Short Circuit Capability  
Very High Current Capability  
Square RBSOA  
VISOL  
FC  
50/60Hz, 1 minute  
Mounting Force  
2500  
50..200/11..45  
8
V~  
N/lb.  
g
Weight  
Advantages  
z
High Power Density  
Low Gate Drive Requirement  
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
600  
3.5  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
6.0  
z
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
z
50 μA  
mA  
±200 nA  
z
Note 2, TJ = 150°C  
3
z
z
IGES  
VCE = 0V, VGE = ±20V  
z
VCE(sat)  
IC = 100A, VGE = 15V, Note 1  
1.40  
1.58  
1.70  
V
V
z
TJ = 150°C  
z
© 2013 IXYS CORPORATION, All Rights Reserved  
DS100472A(02/13)  

与MMIX1X200N60B3相关器件

型号 品牌 获取价格 描述 数据表
MMIX1X200N60B3H1 LITTELFUSE

获取价格

我们的表面安装式功率器件(SMPD)封装技术在ISOPLUS?封装组合基础上有所扩展,纳入
MMIX1X340N65B4 LITTELFUSE

获取价格

我们的表面安装式功率器件(SMPD)封装技术在ISOPLUS?封装组合基础上有所扩展,纳入
MMIX1Y100N120C3H1 LITTELFUSE

获取价格

Insulated Gate Bipolar Transistor, 92A I(C), 1200V V(BR)CES, N-Channel,
MMIX1Y100N120C3H1 IXYS

获取价格

Insulated Gate Bipolar Transistor, 92A I(C), 1200V V(BR)CES, N-Channel,
MMIX1Y25N250CV1 LITTELFUSE

获取价格

我们的表面安装式功率器件(SMPD)封装技术在ISOPLUS?封装组合基础上有所扩展,纳入
MMIX1Y82N120C3H1 LITTELFUSE

获取价格

我们的表面安装式功率器件(SMPD)封装技术在ISOPLUS?封装组合基础上有所扩展,纳入
MMIX2F150N20T LITTELFUSE

获取价格

SMPD封装重仅8g,相比传统的电源模块更轻(通常要轻50%),因此可打造重量更轻的电源系
MMIX2F60N50P3 LITTELFUSE

获取价格

SMPD封装重仅8g,相比传统的电源模块更轻(通常要轻50%),因此可打造重量更轻的电源系
MMIX2F94N30T LITTELFUSE

获取价格

SMPD封装重仅8g,相比传统的电源模块更轻(通常要轻50%),因此可打造重量更轻的电源系
MMIX4B12N300 LITTELFUSE

获取价格

我们的SMPD产品系列在拓扑或硅品种方面提供丰富的标准选择。 凭借简单易用性和经过优化的生