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MMJT9410T1 PDF预览

MMJT9410T1

更新时间： 2024-11-06 11:12:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体管
页数 文件大小 规格书
7页 192K
描述
NPN 双极功率晶体管

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中文翻译

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MMJT9410T1 数据手册

 浏览型号MMJT9410T1的Datasheet PDF文件第2页浏览型号MMJT9410T1的Datasheet PDF文件第3页浏览型号MMJT9410T1的Datasheet PDF文件第4页浏览型号MMJT9410T1的Datasheet PDF文件第5页浏览型号MMJT9410T1的Datasheet PDF文件第6页浏览型号MMJT9410T1的Datasheet PDF文件第7页 
MMJT9410  
Bipolar Power Transistors  
NPN Silicon  
Features  
• SOT−223 Surface Mount Packaging  
http://onsemi.com  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• These Devices are Pb−Free and are RoHS Compliant  
POWER BJT  
IC = 3.0 AMPERES  
BVCEO = 30 VOLTS  
MAXIMUM RATINGS  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Symbol Value  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Adc  
V
30  
45  
CEO  
V
CE(sat) = 0.2 VOLTS  
V
CB  
EB  
Emitter−Base Voltage  
V
6.0  
1.0  
3.0  
5.0  
Base Current − Continuous  
Collector Current − Continuous  
Collector Current − Peak  
I
B
4
C 2,4  
I
C
C
I
CM  
Total Power Dissipation @ T = 25°C  
P
D
3.0  
24  
W
mW/°C  
W
C
Derate above 25°C  
B
1
C
2
E
3
Total P @ T = 25°C mounted on 1” sq.  
1.7  
D
A
(645 sq. mm) Collector pad on FR−4  
B 1  
E 3  
Top View  
Pinout  
bd material  
Schematic  
Total P @ T = 25°C mounted on 0.012” sq.  
0.75  
D
A
(7.6 sq. mm) Collector pad on FR−4 bd material  
Operating and Storage Junction  
Temperature Range  
T
T
−55 to  
°C  
J, stg  
+150  
MARKING  
DIAGRAM  
4
ESD − Human Body Model  
ESD − Machine Model  
HBM  
MM  
3B  
C
V
V
1
2
3
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
AYW  
9410G  
G
SOT−223  
CASE 318E  
STYLE 1  
1
THERMAL CHARACTERISTICS  
A
Y
W
= Assembly Location  
= Year  
= Work Week  
Characteristic  
Symbol  
Max  
42  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction−to−Case  
R
q
JC  
Thermal Resistance, Junction−to−Ambient on  
1” sq. (645 sq. mm) Collector pad on FR−4 bd  
material  
R
75  
9410 = Device Code  
q
JA  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
Thermal Resistance, Junction−to−Ambient on  
0.012” sq. (7.6 sq. mm) Collector pad on  
FR−4 bd material  
R
165  
260  
°C/W  
°C  
q
JA  
ORDERING INFORMATION  
Maximum Lead Temperature for Soldering  
Purposes, 1/8” from case for 5 seconds  
T
L
†
Device  
Package  
Shipping  
MMJT9410G  
SOT−223  
(Pb−Free)  
1000 / Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
August, 2013 − Rev. 7  
MMJT9410/D  
1234567

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MMJT9410T1 替代型号

型号 品牌 替代类型 描述 数据表
MMJT9410T1G ONSEMI

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