MMJT9435T1G

更新时间： 2024-11-18 03:48:59

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	89K
描述
Bipolar Power Transistors PNP Silicon

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中文翻译

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数据手册
替代型号

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MMJT9435T1G 数据手册

MMJT9435

Preferred Device

Bipolar Power Transistors

PNP Silicon

Features

• Pb−Free Packages are Available

http://onsemi.com

• Collector −Emitter Sustaining Voltage −

POWER BJT

= 30 Vdc (Min) @ I = 10 mAdc

CEO(sus)

I_C= 3.0 AMPERES

BV_CEO= 30 VOLTS

_CE(sat)= 0.275 VOLTS

• High DC Current Gain −

= 125 (Min) @ I = 0.8 Adc

= 90 (Min) @ I = 3.0 Adc

• Low Collector −Emitter Saturation Voltage −

= 0.275 Vdc (Max) @ I = 1.2 Adc

CE(sat)

C 2,4

= 0.55 Vdc (Max) @ I = 3.0 Adc

• SOT−223 Surface Mount Packaging

• Epoxy Meets UL 94, V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B; > 8000 V

Machine Model, C; > 400 V

B 1

E 3

Schematic

MARKING

DIAGRAM

SOT−223

CASE 318E

STYLE 1

AWW

9435

= Specific Device Code

= Assembly Location

= Work Week

PIN ASSIGNMENT

Top View Pinout

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

September, 2004 − Rev. 5

MMJT9435/D

12 3 4 5 6

中文翻译

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MMJT9435T1G 替代型号

型号	品牌	替代类型	描述	数据表
MMJT9435T3G	ONSEMI	完全替代	Bipolar Power Transistors PNP Silicon
MMJT9435T3	ONSEMI	完全替代	Bipolar Power Transistors PNP Silicon
NJT4030PT1G	ONSEMI	类似代替	Bipolar Power Transistors PNP Silicon

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