Datasheet > MMJX1H40N150

MMJX1H40N150

更新时间： 2024-11-19 14:56:51

品牌	Logo	应用领域
力特 - LITTELFUSE		栅脉冲栅极
页数	文件大小	规格书
6页	286K
描述
MOS栅控晶闸管专为大功率脉冲和电容放电应用而设计，由施加在栅极的电压接通（MOS结构）。能够在1微秒的时间内承载高达32kA的电流

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中文翻译

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数据手册

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MMJX1H40N150 数据手册

V_DM

= 1500V

1500V MOS Gated

Thyristor

MMJX1H40N150

(Electrically Isolated Tab)

Isolated Tab

Symbol

V_DM

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

1500

V_GK

Continuous

Transient

±30

±40

I_TSM

T_C= 25°C, 1μs

T_C= 25°C, 10μs

15.5

6.4

P_D

T_C= 25°C

320

T_J

T_JM

T_stg

-55 ... +150

150

°C

G = Gate

= Cathode

A = Anode Ks = Cathode Sense

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062 in.) from Case for 10s

300

260

°C

V_ISOL

F_C

50/60Hz, 1 minute

Mounting Force

2500

50..200/11..45

N/lb

Features

Weight



Silicon Chip on Direct-Copper Bond

(DCB) Substrate

Isolated Mounting Surface

2500V~ Electrical Isolation

Very High Current Capability



Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

1500

2.5

Typ.

Max.

Advantages

V_BR

V_GK(th)

V_T

I_A= 250A, V_GK= 0V

I_A= 250μA, V_AK= V_GK

I_T= 1000A, V_GK= 15V

I_T> I_L, V_GK= 15V

V_GK= 15V



High Power Density

Low Gate Drive Requirement



5.0

6.0

4.75

1.20

5.25

Applications

r_T

m

V_BO

I_D



Capacitive Discharge Circuits

Ignition Circuits

Solid State Surge Protection



V_AK= 1500V, V_GK= 0V

15 A

1.5 mA



T_J= 125C

I_L

I_H

250

200

I_GKS

V_AK= 0V, V_GK= 30V

200 nA

DS100594C(12/17)

12 3 4 5 6

中文翻译

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