5秒后页面跳转
NJT4030PT1G PDF预览

NJT4030PT1G

更新时间: 2024-11-18 03:46:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管光电二极管放大器
页数 文件大小 规格书
6页 70K
描述
Bipolar Power Transistors PNP Silicon

NJT4030PT1G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-261AA包装说明:TO-261, 4 PIN
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:4 weeks
风险等级:0.81外壳连接:COLLECTOR
最大集电极电流 (IC):3 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):100
JEDEC-95代码:TO-261AAJESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):160 MHz
Base Number Matches:1

NJT4030PT1G 数据手册

 浏览型号NJT4030PT1G的Datasheet PDF文件第2页浏览型号NJT4030PT1G的Datasheet PDF文件第3页浏览型号NJT4030PT1G的Datasheet PDF文件第4页浏览型号NJT4030PT1G的Datasheet PDF文件第5页浏览型号NJT4030PT1G的Datasheet PDF文件第6页 
NJT4030P  
Preferred Device  
Product Preview  
Bipolar Power Transistors  
PNP Silicon  
http://onsemi.com  
Features  
Collector −Emitter Sustaining Voltage −  
V
= 40 Vdc (Min) @ I = 10 mAdc  
C
CEO(sus)  
PNP TRANSISTOR  
3.0 AMPERES  
40 VOLTS, 2.0 WATTS  
High DC Current Gain −  
h
= 200 (Min) @ I = 1.0 Adc  
FE  
C
= 100 (Min) @ I = 3.0 Adc  
C
Low Collector −Emitter Saturation Voltage −  
V
CE(sat)  
= 0.200 Vdc (Max) @ I = 1.0 Adc  
C
C 2,4  
= 0.500 Vdc (Max) @ I = 3.0 Adc  
C
SOT−223 Surface Mount Packaging  
Epoxy Meets UL 94, V−0 @ 0.125 in  
ESD Ratings: Human Body Model, 3B; > 8000 V  
Machine Model, C; > 400 V  
B 1  
E 3  
These are Pb−Free Devices  
Schematic  
MARKING  
DIAGRAM  
SOT−223  
CASE 318E  
STYLE 1  
AYW  
4030PG  
1
A
Y
= Assembly Location  
Year  
W
= Work Week  
4030P = Specific Device Code  
G
= Pb−Free Package  
PIN ASSIGNMENT  
4
C
B
C
E
3
1
2
Top View Pinout  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
December, 2006 − Rev. P2  
NJT4030P/D  

NJT4030PT1G 替代型号

型号 品牌 替代类型 描述 数据表
MMJT9435T1G ONSEMI

类似代替

Bipolar Power Transistors PNP Silicon
NJT4030PT3G ONSEMI

类似代替

Bipolar Power Transistors PNP Silicon

与NJT4030PT1G相关器件

型号 品牌 获取价格 描述 数据表
NJT4030PT3G ONSEMI

获取价格

Bipolar Power Transistors PNP Silicon
NJT4031N ONSEMI

获取价格

Bipolar Power Transistors NPN Silicon
NJT4031N_10 ONSEMI

获取价格

Bipolar Power Transistors
NJT4031NT1G ONSEMI

获取价格

Bipolar Power Transistors NPN Silicon
NJT4031NT3G ONSEMI

获取价格

Bipolar Power Transistors NPN Silicon
NJT5012/12F ETC

获取价格

Microwave Components Products
NJT5013/13F ETC

获取价格

Microwave Components Products
NJT5015FH NJRC

获取价格

Up Converter, 14000MHz Min, 14500MHz Max,
NJT5015H NJRC

获取价格

Up Converter, 14000MHz Min, 14500MHz Max,
NJT5018F00100 NJRC

获取价格

Up Converter, 8dBm Output Power-Max,