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NJT4030PT1G PDF预览

NJT4030PT1G

更新时间: 2024-11-05 03:46:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管光电二极管放大器
页数 文件大小 规格书
6页 70K
描述
Bipolar Power Transistors PNP Silicon

NJT4030PT1G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-261AA包装说明:TO-261, 4 PIN
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:4 weeks
风险等级:0.81外壳连接:COLLECTOR
最大集电极电流 (IC):3 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):100
JEDEC-95代码:TO-261AAJESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):160 MHz
Base Number Matches:1

NJT4030PT1G 数据手册

 浏览型号NJT4030PT1G的Datasheet PDF文件第2页浏览型号NJT4030PT1G的Datasheet PDF文件第3页浏览型号NJT4030PT1G的Datasheet PDF文件第4页浏览型号NJT4030PT1G的Datasheet PDF文件第5页浏览型号NJT4030PT1G的Datasheet PDF文件第6页 
NJT4030P  
Preferred Device  
Product Preview  
Bipolar Power Transistors  
PNP Silicon  
http://onsemi.com  
Features  
Collector −Emitter Sustaining Voltage −  
V
= 40 Vdc (Min) @ I = 10 mAdc  
C
CEO(sus)  
PNP TRANSISTOR  
3.0 AMPERES  
40 VOLTS, 2.0 WATTS  
High DC Current Gain −  
h
= 200 (Min) @ I = 1.0 Adc  
FE  
C
= 100 (Min) @ I = 3.0 Adc  
C
Low Collector −Emitter Saturation Voltage −  
V
CE(sat)  
= 0.200 Vdc (Max) @ I = 1.0 Adc  
C
C 2,4  
= 0.500 Vdc (Max) @ I = 3.0 Adc  
C
SOT−223 Surface Mount Packaging  
Epoxy Meets UL 94, V−0 @ 0.125 in  
ESD Ratings: Human Body Model, 3B; > 8000 V  
Machine Model, C; > 400 V  
B 1  
E 3  
These are Pb−Free Devices  
Schematic  
MARKING  
DIAGRAM  
SOT−223  
CASE 318E  
STYLE 1  
AYW  
4030PG  
1
A
Y
= Assembly Location  
Year  
W
= Work Week  
4030P = Specific Device Code  
G
= Pb−Free Package  
PIN ASSIGNMENT  
4
C
B
C
E
3
1
2
Top View Pinout  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
December, 2006 − Rev. P2  
NJT4030P/D  

NJT4030PT1G 替代型号

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MMJT9435T1G ONSEMI

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Bipolar Power Transistors PNP Silicon
NJT4030PT3G ONSEMI

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Bipolar Power Transistors PNP Silicon

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