是否无铅: | 含铅 | 生命周期: | End Of Life |
零件包装代码: | TO-261AA | 包装说明: | TO-261, 4 PIN |
针数: | 4 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 1 week |
风险等级: | 5.2 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 30 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 90 | JEDEC-95代码: | TO-261AA |
JESD-30 代码: | R-PDSO-G4 | JESD-609代码: | e0 |
湿度敏感等级: | 3 | 元件数量: | 1 |
端子数量: | 4 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 240 |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 3 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 110 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MMJT9435T3G | ONSEMI |
完全替代 |
Bipolar Power Transistors PNP Silicon | |
MMJT9435T1G | ONSEMI |
完全替代 |
Bipolar Power Transistors PNP Silicon | |
NSS40300MZ4T1G | ONSEMI |
类似代替 |
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MMJT9435T3G | ONSEMI |
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Bipolar Power Transistors PNP Silicon | |
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MOS栅控晶闸管专为大功率脉冲和电容放电应用而设计,由施加在栅极的电压接通(MOS结构)。 | |
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METALLIZED POLYESTER FILM CAPACITORS | |
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Metallized polyester According to CECC 30401-042, IEC 60384-2, DIN 44122 | |
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KT | |
MMK100U160UX | MACMIC |
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KU | |
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KU | |
MMK10103K630A01L16.5TR18 | KEMET |
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MMK10224K100A01L16.5TR18 | KEMET |
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