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MMJT9435T3 PDF预览

MMJT9435T3

更新时间: 2024-11-05 03:48:59
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
6页 89K
描述
Bipolar Power Transistors PNP Silicon

MMJT9435T3 技术参数

是否无铅:含铅生命周期:End Of Life
零件包装代码:TO-261AA包装说明:TO-261, 4 PIN
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:5.2Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):3 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):90JEDEC-95代码:TO-261AA
JESD-30 代码:R-PDSO-G4JESD-609代码:e0
湿度敏感等级:3元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
极性/信道类型:PNP最大功率耗散 (Abs):3 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管元件材料:SILICON
标称过渡频率 (fT):110 MHzBase Number Matches:1

MMJT9435T3 数据手册

 浏览型号MMJT9435T3的Datasheet PDF文件第2页浏览型号MMJT9435T3的Datasheet PDF文件第3页浏览型号MMJT9435T3的Datasheet PDF文件第4页浏览型号MMJT9435T3的Datasheet PDF文件第5页浏览型号MMJT9435T3的Datasheet PDF文件第6页 
MMJT9435  
Preferred Device  
Bipolar Power Transistors  
PNP Silicon  
Features  
Pb−Free Packages are Available  
http://onsemi.com  
Collector −Emitter Sustaining Voltage −  
POWER BJT  
V
= 30 Vdc (Min) @ I = 10 mAdc  
CEO(sus)  
C
IC = 3.0 AMPERES  
BVCEO = 30 VOLTS  
CE(sat) = 0.275 VOLTS  
High DC Current Gain −  
= 125 (Min) @ I = 0.8 Adc  
h
FE  
C
= 90 (Min) @ I = 3.0 Adc  
C
V
Low Collector −Emitter Saturation Voltage −  
= 0.275 Vdc (Max) @ I = 1.2 Adc  
V
CE(sat)  
C
C 2,4  
= 0.55 Vdc (Max) @ I = 3.0 Adc  
C
SOT−223 Surface Mount Packaging  
Epoxy Meets UL 94, V−0 @ 0.125 in  
ESD Ratings: Human Body Model, 3B; > 8000 V  
Machine Model, C; > 400 V  
B 1  
E 3  
Schematic  
MARKING  
DIAGRAM  
SOT−223  
CASE 318E  
STYLE 1  
AWW  
9435  
9435  
A
WW  
= Specific Device Code  
= Assembly Location  
= Work Week  
PIN ASSIGNMENT  
4
C
B
C
E
3
1
2
Top View Pinout  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
September, 2004 − Rev. 5  
MMJT9435/D  

MMJT9435T3 替代型号

型号 品牌 替代类型 描述 数据表
MMJT9435T3G ONSEMI

完全替代

Bipolar Power Transistors PNP Silicon
MMJT9435T1G ONSEMI

完全替代

Bipolar Power Transistors PNP Silicon
NSS40300MZ4T1G ONSEMI

类似代替

Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) PNP Transistor

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