5秒后页面跳转
MMJT9435 PDF预览

MMJT9435

更新时间: 2024-11-04 22:20:19
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
4页 98K
描述
Bipolar Power Transistors

MMJT9435 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:unknown风险等级:5.22
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):3 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):90
JESD-30 代码:R-PDSO-G4JESD-609代码:e0
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP最大功率耗散 (Abs):3 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):110 MHz
Base Number Matches:1

MMJT9435 数据手册

 浏览型号MMJT9435的Datasheet PDF文件第2页浏览型号MMJT9435的Datasheet PDF文件第3页浏览型号MMJT9435的Datasheet PDF文件第4页 
Order this document  
by MMJT9435/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
PNP Silicon  
Collector –Emitter Sustaining Voltage — V  
CEO(sus)  
POWER BJT  
= 3.0 AMPERES  
= 30 VOLTS  
= 30 Vdc (Min) @ I = 10 mAdc  
C
I
B
C
VCEO  
High DC Current Gain — h  
FE  
= 140 (Min) @ I = 1.2 Adc  
C
= 125 (Min) @ I = 3.0 Adc  
C
V
= 0.275 VOLTS  
CE(sat)  
Low Collector –Emitter Saturation Voltage — V  
CE(sat)  
= 0.275 Vdc (Max) @ I = 1.2 Adc  
C
= 0.68 Vdc (Max) @ I = 5.0 Adc  
C
SOT–223 Surface Mount Packaging  
C 2,4  
CASE 318E–04, Style 1  
C
B 1  
E 3  
B
C
E
Schematic  
Top View  
Pinout  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Collector–Emitter Voltage  
Symbol  
Value  
30  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
V
CEO  
Collector–Base Voltage  
V
CB  
45  
Emitter–Base Voltage  
V
EB  
± 8.0  
1.0  
Base Current — Continuous  
I
B
Collector Current — Continuous  
Collector Current — Peak  
I
C
3.0  
5.0  
Total Power Dissipation @ T = 25 C  
C
P
D
3.0  
0.025  
2.0  
1.5  
0.8  
Watts  
mW/ C  
Watts  
Derate above 25 C  
Total P @ T = 25 C mounted on 1” sq. (645 sq. mm) Drain pad on FR–4 bd material  
D
A
Total P @ T = 25 C mounted on 0.92” sq. (590 sq. mm) Drain pad on FR–4 bd material  
D
A
Total P @ T = 25 C mounted on 0.012” sq. (7.6 sq. mm) Drain pad on FR–4 bd material  
D
A
Operating and Storage Junction Temperature Range  
T , T  
55 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance – Junction to Case  
R
θJC  
R
θJA  
R
θJA  
R
θJA  
40  
60  
85  
C/W  
– Junction to Ambient on 1” sq. (645 sq. mm) Drain pad on FR–4 bd material  
– Junction to Ambient on 0.92” sq. (590 sq. mm) Drain pad on FR–4 bd material  
– Junction to Ambient on 0.012” sq. (7.6 sq. mm) Drain pad on FR–4 bd material  
156  
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds  
T
L
260  
C
This document contains information on a new product. Specifications and information are subject to change without notice.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1997

与MMJT9435相关器件

型号 品牌 获取价格 描述 数据表
MMJT9435T1 ONSEMI

获取价格

Bipolar Power Transistors PNP Silicon
MMJT9435T1G ONSEMI

获取价格

Bipolar Power Transistors PNP Silicon
MMJT9435T3 ONSEMI

获取价格

Bipolar Power Transistors PNP Silicon
MMJT9435T3G ONSEMI

获取价格

Bipolar Power Transistors PNP Silicon
MMJX1H40N150 LITTELFUSE

获取价格

MOS栅控晶闸管专为大功率脉冲和电容放电应用而设计,由施加在栅极的电压接通(MOS结构)。
MMK RUBYCON

获取价格

METALLIZED POLYESTER FILM CAPACITORS
MMK10 ETC

获取价格

Metallized polyester According to CECC 30401-042, IEC 60384-2, DIN 44122
MMK100T160UX MACMIC

获取价格

KT
MMK100U160UX MACMIC

获取价格

KU
MMK100U160UX6J MACMIC

获取价格

KU