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MMJT9435 PDF预览

MMJT9435

更新时间: 2024-11-17 22:20:19
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
4页 98K
描述
Bipolar Power Transistors

MMJT9435 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:unknown风险等级:5.22
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):3 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):90
JESD-30 代码:R-PDSO-G4JESD-609代码:e0
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP最大功率耗散 (Abs):3 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):110 MHz
Base Number Matches:1

MMJT9435 数据手册

 浏览型号MMJT9435的Datasheet PDF文件第2页浏览型号MMJT9435的Datasheet PDF文件第3页浏览型号MMJT9435的Datasheet PDF文件第4页 
Order this document  
by MMJT9435/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
PNP Silicon  
Collector –Emitter Sustaining Voltage — V  
CEO(sus)  
POWER BJT  
= 3.0 AMPERES  
= 30 VOLTS  
= 30 Vdc (Min) @ I = 10 mAdc  
C
I
B
C
VCEO  
High DC Current Gain — h  
FE  
= 140 (Min) @ I = 1.2 Adc  
C
= 125 (Min) @ I = 3.0 Adc  
C
V
= 0.275 VOLTS  
CE(sat)  
Low Collector –Emitter Saturation Voltage — V  
CE(sat)  
= 0.275 Vdc (Max) @ I = 1.2 Adc  
C
= 0.68 Vdc (Max) @ I = 5.0 Adc  
C
SOT–223 Surface Mount Packaging  
C 2,4  
CASE 318E–04, Style 1  
C
B 1  
E 3  
B
C
E
Schematic  
Top View  
Pinout  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Collector–Emitter Voltage  
Symbol  
Value  
30  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
V
CEO  
Collector–Base Voltage  
V
CB  
45  
Emitter–Base Voltage  
V
EB  
± 8.0  
1.0  
Base Current — Continuous  
I
B
Collector Current — Continuous  
Collector Current — Peak  
I
C
3.0  
5.0  
Total Power Dissipation @ T = 25 C  
C
P
D
3.0  
0.025  
2.0  
1.5  
0.8  
Watts  
mW/ C  
Watts  
Derate above 25 C  
Total P @ T = 25 C mounted on 1” sq. (645 sq. mm) Drain pad on FR–4 bd material  
D
A
Total P @ T = 25 C mounted on 0.92” sq. (590 sq. mm) Drain pad on FR–4 bd material  
D
A
Total P @ T = 25 C mounted on 0.012” sq. (7.6 sq. mm) Drain pad on FR–4 bd material  
D
A
Operating and Storage Junction Temperature Range  
T , T  
55 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance – Junction to Case  
R
θJC  
R
θJA  
R
θJA  
R
θJA  
40  
60  
85  
C/W  
– Junction to Ambient on 1” sq. (645 sq. mm) Drain pad on FR–4 bd material  
– Junction to Ambient on 0.92” sq. (590 sq. mm) Drain pad on FR–4 bd material  
– Junction to Ambient on 0.012” sq. (7.6 sq. mm) Drain pad on FR–4 bd material  
156  
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds  
T
L
260  
C
This document contains information on a new product. Specifications and information are subject to change without notice.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1997

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