是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-261AA | 包装说明: | PLASTIC, CASE 318E-04, TO-261, 4 PIN |
针数: | 4 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.41 |
Is Samacsys: | N | 其他特性: | UL RECOGNIZED |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 30 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 60 | JEDEC-95代码: | TO-261AA |
JESD-30 代码: | R-PDSO-G4 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 4 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 240 | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 3 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 72 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MMJT9410G | ONSEMI |
完全替代 |
Bipolar Power Transistors NPN Silicon | |
FZT849 | DIODES |
类似代替 |
SOT223 NPN SILICON PLANAR HIGH CURRENT | |
FZT849TA | DIODES |
功能相似 |
Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMJT9410G | ONSEMI |
获取价格 |
Bipolar Power Transistors NPN Silicon | |
MMJT9410T1 | ONSEMI |
获取价格 |
NPN 双极功率晶体管 | |
MMJT9410T1G | ONSEMI |
获取价格 |
NPN 双极功率晶体管 | |
MMJT9410T1G | ROCHESTER |
获取价格 |
10mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 318E, 4 PIN | |
MMJT9435 | ONSEMI |
获取价格 |
Bipolar Power Transistors PNP Silicon | |
MMJT9435 | MOTOROLA |
获取价格 |
Bipolar Power Transistors | |
MMJT9435T1 | ONSEMI |
获取价格 |
Bipolar Power Transistors PNP Silicon | |
MMJT9435T1G | ONSEMI |
获取价格 |
Bipolar Power Transistors PNP Silicon | |
MMJT9435T3 | ONSEMI |
获取价格 |
Bipolar Power Transistors PNP Silicon | |
MMJT9435T3G | ONSEMI |
获取价格 |
Bipolar Power Transistors PNP Silicon |