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MMJT9410 PDF预览

MMJT9410

更新时间: 2024-11-05 03:29:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管光电二极管
页数 文件大小 规格书
5页 74K
描述
Bipolar Power Transistors NPN Silicon

MMJT9410 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-261AA包装说明:PLASTIC, CASE 318E-04, TO-261, 4 PIN
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.41
Is Samacsys:N其他特性:UL RECOGNIZED
外壳连接:COLLECTOR最大集电极电流 (IC):3 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):60JEDEC-95代码:TO-261AA
JESD-30 代码:R-PDSO-G4JESD-609代码:e0
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性/信道类型:NPN
最大功率耗散 (Abs):3 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管元件材料:SILICON标称过渡频率 (fT):72 MHz
Base Number Matches:1

MMJT9410 数据手册

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MMJT9410  
Preferred Device  
Bipolar Power Transistors  
NPN Silicon  
Features  
Collector −Emitter Sustaining Voltage −  
V
= 30 Vdc (Min) @ I = 10 mAdc  
http://onsemi.com  
CEO(sus)  
C
High DC Current Gain −  
h
= 85 (Min) @ I = 0.8 Adc  
POWER BJT  
FE  
C
= 60 (Min) @ I = 3.0 Adc  
C
IC = 3.0 AMPERES  
BVCEO = 30 VOLTS  
VCE(sat) = 0.2 VOLTS  
Low Collector −Emitter Saturation Voltage −  
V
CE(sat)  
= 0.2 Vdc (Max) @ I = 1.2 Adc  
C
= 0.45 Vdc (Max) @ I = 3.0 Adc  
C
SOT−223 Surface Mount Packaging  
Epoxy Meets UL 94 V−0 @ 0.125 in  
ESD Ratings: Human Body Model, 3B; > 8000 V  
Machine Model, C; > 400 V  
4
C 2,4  
C
Pb−Free Package is Available  
B
1
C
2
E
3
MAXIMUM RATINGS  
B 1  
E 3  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol Value  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Top View  
Pinout  
Schematic  
V
30  
45  
CEO  
V
CB  
EB  
V
6.0  
1.0  
MARKING  
DIAGRAM  
Base Current − Continuous  
I
B
C
1
Collector Current − Continuous  
− Peak  
I
3.0  
5.0  
Total Power Dissipation @ T = 25°C  
P
3.0  
24  
1.7  
W
mW/°C  
W
C
D
AYW  
9410G  
G
SOT−223 (TO−261)  
CASE 318E  
Derate above 25°C  
Total P @ T = 25°C mounted on 1” sq.  
D
A
STYLE 1  
(645 sq. mm) Collector pad on FR−4  
bd material  
1
Total P @ T = 25°C mounted on 0.012” sq.  
0.75  
D
A
(7.6 sq. mm) Collector pad on FR−4 bd material  
A
Y
W
= Assembly Location  
= Year  
= Work Week  
Operating and Storage Junction  
Temperature Range  
T
T
−55 to  
+150  
°C  
J, stg  
9410 = Device Code  
THERMAL CHARACTERISTICS  
Characteristic  
G
= Pb−Free Package  
Symbol  
Max  
42  
Unit  
°C/W  
°C/W  
(Note: Microdot may be in either location)  
Thermal Resistance, Junction−to−Case  
R
q
JC  
JA  
Thermal Resistance, Junction−to−Ambient on  
1” sq. (645 sq. mm) Collector pad on FR−4 bd  
material  
R
R
75  
q
ORDERING INFORMATION  
Device  
Package  
Shipping  
Thermal Resistance, Junction−to−Ambient on  
0.012” sq. (7.6 sq. mm) Collector pad on  
FR−4 bd material  
165  
260  
°C/W  
°C  
q
JA  
MMJT9410  
MMJT9410G  
SOT−223  
1000 / Tape & Reel  
1000 / Tape & Reel  
SOT−223  
(Pb−Free)  
Maximum Lead Temperature for Soldering  
Purposes, 1/8” from case for 5 seconds  
T
L
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
October, 2006 − Rev. 6  
MMJT9410/D  

MMJT9410 替代型号

型号 品牌 替代类型 描述 数据表
MMJT9410G ONSEMI

完全替代

Bipolar Power Transistors NPN Silicon
FZT849 DIODES

类似代替

SOT223 NPN SILICON PLANAR HIGH CURRENT
FZT849TA DIODES

功能相似

Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4

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