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MMIX4B20N300 PDF预览

MMIX4B20N300

更新时间: 2024-11-06 14:56:23
品牌 Logo 应用领域
力特 - LITTELFUSE 光电二极管
页数 文件大小 规格书
7页 325K
描述
我们的SMPD产品系列在拓扑或硅品种方面提供丰富的标准选择。 凭借简单易用性和经过优化的生产工艺,它可快速上市,为需要有效区分不同芯片和电路组合的客户实现快速产品研发。 可采用一种高度可靠的封装成

MMIX4B20N300 数据手册

 浏览型号MMIX4B20N300的Datasheet PDF文件第2页浏览型号MMIX4B20N300的Datasheet PDF文件第3页浏览型号MMIX4B20N300的Datasheet PDF文件第4页浏览型号MMIX4B20N300的Datasheet PDF文件第5页浏览型号MMIX4B20N300的Datasheet PDF文件第6页浏览型号MMIX4B20N300的Datasheet PDF文件第7页 
Preliminary Technical Information  
High Voltage, High Gain  
BIMOSFETTM Monolithic  
Bipolar MOS Transistor  
VCES  
IC110  
= 3000V  
= 14A  
MMIX4B20N300  
C2  
C1  
VCE(sat) 3.2V  
G1  
G2  
E2C4  
E1C3  
(Electrically Isolated Tab)  
G4  
G3  
C2  
G2  
E3E4  
E2C4  
G4  
E3E4  
C1  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
G1  
E1C3  
TC = 25°C to 150°C  
3000  
3000  
V
V
VCGR  
TJ = 25°C to 150°C, RGE = 1MΩ  
G3  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
Isolated Tab  
E3E4  
G4  
E2C4  
G2  
IC25  
IC110  
ICM  
TC = 25°C  
34  
14  
A
A
TC = 110°C  
C2  
G3  
TC = 25°C, VGE = 19V, 1ms  
10ms  
150  
74  
A
A
E1C3  
G1  
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 125°C, RG = 20Ω  
Clamped Inductive Load  
ICM = 130  
1500  
A
V
C1  
G = Gate  
C = Collector  
E
= Emitter  
PC  
TC = 25°C  
150  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
z Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
FC  
Mounting Force  
50..200 / 11..45  
Nm/lb.in.  
z Isolated Mounting Surface  
z 4000V~ Electrical Isolation  
VISOL  
Weight  
50/60Hz, 1 Minute  
4000  
8
V~  
g
z
High Blocking Voltage  
z High Peak Current Capability  
z Low Saturation Voltage  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Advantages  
Min.  
3000  
2.5  
Typ.  
Max.  
z Low Gate Drive Requirement  
z High Power Density  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = 0.8 • VCES, VGE = 0V  
V
V
5.0  
35 μA  
Note 2, TJ = 125°C  
1.5 mA  
Applications  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
z Switch-Mode and Resonant-Mode  
Power Supplies  
z Capacitor Discharge Circuits  
VCE(sat)  
IC = 20A, VGE = 15V, Note 1  
2.7  
3.2  
3.2  
V
V
TJ = 125°C  
© 2012 IXYS CORPORATION, All Rights Reserved  
DS100432A(06/12)  

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