Datasheet > MMJT350T1_06

MMJT350T1_06

更新时间： 2024-11-18 03:48:59

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
4页	63K
描述
Bipolar Power Transistors PNP Silicon

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MMJT350T1_06 数据手册

MMJT350T1

Bipolar Power Transistors

PNP Silicon

Bipolar power transistors are designed for use in line−operated

applications such as low power, line−operated series pass and

switching regulators requiring PNP capability.

http://onsemi.com

Features

0.5 AMPERE

POWER TRANSISTOR

PNP SILICON

• High Collector−Emitter Sustaining Voltage −

= 300 Vdc @ I

= 1.0 mAdc

CEO(sus)

300 VOLTS, 2.75 WATTS

• Excellent DC Current Gain −

= 30−240 @ I

= 50 mAdc

C 2,4

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B; > 8000 V

Machine Model, C; > 400 V

• Pb−Free Package is Available

B 1

E 3

Schematic

SOT−223

CASE 318E

STYLE 1

MARKING DIAGRAM

AYW

T350 G

= Assembly Location

= Year

= Work Week

= Pb−Free Package

= Device Code

T350

(Note: Microdot may be in either location)

ORDERING INFORMATION

†

Device

Package

Shipping

MMJT350T1

SOT−223

1000 / Tape & Reel

MMJT350T1G

SOT−223

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

January, 2006 − Rev. 2

MMJT350T1/D

12 3 4

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