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MMJT350T1_06 PDF预览

MMJT350T1_06

更新时间: 2024-11-05 03:48:59
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 63K
描述
Bipolar Power Transistors PNP Silicon

MMJT350T1_06 数据手册

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MMJT350T1  
Bipolar Power Transistors  
PNP Silicon  
Bipolar power transistors are designed for use in line−operated  
applications such as low power, line−operated series pass and  
switching regulators requiring PNP capability.  
http://onsemi.com  
Features  
0.5 AMPERE  
POWER TRANSISTOR  
PNP SILICON  
High Collector−Emitter Sustaining Voltage −  
V
= 300 Vdc @ I  
= 1.0 mAdc  
CEO(sus)  
C
300 VOLTS, 2.75 WATTS  
Excellent DC Current Gain −  
h
= 30−240 @ I  
= 50 mAdc  
FE  
C
C 2,4  
Epoxy Meets UL 94 V−0 @ 0.125 in  
ESD Ratings: Human Body Model, 3B; > 8000 V  
Machine Model, C; > 400 V  
Pb−Free Package is Available  
B 1  
E 3  
Schematic  
4
SOT−223  
CASE 318E  
STYLE 1  
1
2
3
MARKING DIAGRAM  
AYW  
T350 G  
G
A
Y
W
G
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
= Device Code  
T350  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMJT350T1  
SOT−223  
1000 / Tape & Reel  
1000 / Tape & Reel  
MMJT350T1G  
SOT−223  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 2  
MMJT350T1/D  

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