生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | 风险等级: | 5.41 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 30 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 60 |
JESD-30 代码: | R-PDSO-G4 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 4 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 3 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMJT9410G | ONSEMI |
获取价格 |
Bipolar Power Transistors NPN Silicon | |
MMJT9410T1 | ONSEMI |
获取价格 |
NPN 双极功率晶体管 | |
MMJT9410T1G | ONSEMI |
获取价格 |
NPN 双极功率晶体管 | |
MMJT9410T1G | ROCHESTER |
获取价格 |
10mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 318E, 4 PIN | |
MMJT9435 | ONSEMI |
获取价格 |
Bipolar Power Transistors PNP Silicon | |
MMJT9435 | MOTOROLA |
获取价格 |
Bipolar Power Transistors | |
MMJT9435T1 | ONSEMI |
获取价格 |
Bipolar Power Transistors PNP Silicon | |
MMJT9435T1G | ONSEMI |
获取价格 |
Bipolar Power Transistors PNP Silicon | |
MMJT9435T3 | ONSEMI |
获取价格 |
Bipolar Power Transistors PNP Silicon | |
MMJT9435T3G | ONSEMI |
获取价格 |
Bipolar Power Transistors PNP Silicon |