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MMJT350T1G PDF预览

MMJT350T1G

更新时间: 2024-11-18 03:48:59
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
4页 63K
描述
Bipolar Power Transistors PNP Silicon

MMJT350T1G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:TO-261AA包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:2 weeks
风险等级:1.17Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:300 V配置:SINGLE
最小直流电流增益 (hFE):20JEDEC-95代码:TO-261AA
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):2.75 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

MMJT350T1G 数据手册

 浏览型号MMJT350T1G的Datasheet PDF文件第2页浏览型号MMJT350T1G的Datasheet PDF文件第3页浏览型号MMJT350T1G的Datasheet PDF文件第4页 
MMJT350T1  
Bipolar Power Transistors  
PNP Silicon  
Bipolar power transistors are designed for use in line−operated  
applications such as low power, line−operated series pass and  
switching regulators requiring PNP capability.  
http://onsemi.com  
Features  
0.5 AMPERE  
POWER TRANSISTOR  
PNP SILICON  
High Collector−Emitter Sustaining Voltage −  
V
= 300 Vdc @ I  
= 1.0 mAdc  
CEO(sus)  
C
300 VOLTS, 2.75 WATTS  
Excellent DC Current Gain −  
h
= 30−240 @ I  
= 50 mAdc  
FE  
C
C 2,4  
Epoxy Meets UL 94 V−0 @ 0.125 in  
ESD Ratings: Human Body Model, 3B; > 8000 V  
Machine Model, C; > 400 V  
Pb−Free Package is Available  
B 1  
E 3  
Schematic  
4
SOT−223  
CASE 318E  
STYLE 1  
1
2
3
MARKING DIAGRAM  
AYW  
T350 G  
G
A
Y
W
G
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
= Device Code  
T350  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMJT350T1  
SOT−223  
1000 / Tape & Reel  
1000 / Tape & Reel  
MMJT350T1G  
SOT−223  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 2  
MMJT350T1/D  

MMJT350T1G 替代型号

型号 品牌 替代类型 描述 数据表
MMJT350T1 ONSEMI

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