Datasheet > MMIX4G20N250

MMIX4G20N250

更新时间： 2024-11-18 22:59:27

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
6页	1325K
描述
MOSFET N-CH

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中文翻译

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数据手册

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MMIX4G20N250 数据手册

High Voltage IGBT

For Capacitor Discharge

Applications

V_CES= 2500V

I_C25= 23A

V_CE(sat) 3.1V

MMIX4G20N250

( Electrically Isolated Tab)

H-Bridge Configuration

E2C4

E1C3

E2C4

E3E4

E1C3

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

2500

T_J= 25°C to 150°C, R_GE= 1M

Isolated Tab

E3E4

V_GES

V_GEM

Continuous

Transient

± 20

± 30

E2C4

I_C25

I_C90

I_CM

T_C= 25°C

T_C= 90°C

E1C3

T_C= 25°C, V_GE= 19V, 1ms

10ms

105

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 20

I_CM= 60

1500

G = Gate

C = Collector

= Emitter

(RBSOA)

Clamped Inductive Load

P_C

T_C= 25°C

100

T_J

-55 ... +150

150

°C

T_JM

T_stg

Features

-55 ... +150



Silicon Chip on Direct-Copper Bond

(DCB) Substrate

Isolated Mounting Surface

4000V~ Electrical Isolation

High Peak Current Capability

Low Saturation Voltage

T_SOLD

F_C

Plastic Body for 10 seconds

Mounting Force

260

°C

50..200 / 11..45

Nm/lb.in.



V_ISOL

Weight

50/60Hz, 1 Minute

4000

Molding Epoxies Meet UL 94 V-0

Flammability Classification

Symbol

Test Conditions

Characteristic Values

Advantages

(T_J= 25C, Unless Otherwise Specified)

Min.

2500

3.0

Typ.

Max.

^High Power Density

BV_CES

V_GE(th)

I_CES

I_C= 250A, V_GE= 0V

I_C= 250A, V_CE= V_GE

V_CE= 0.8 • V_CES, V_GE= 0V



^Easy to Mount



5.0

10 A

Note 2, T_J= 125°C

750 A

Applications

I_GES

V_CE= 0V, V_GE= ±20V

±100 nA

^Capacitor Discharge



V_CE(sat)

I_C= 20A, V_GE= 15V, Note 1

3.1

^Pulser Circuits



DS100278C(03/21)

12 3 4 5 6

中文翻译

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