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MMIX4G20N250 PDF预览

MMIX4G20N250

更新时间: 2024-11-05 22:59:27
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页数 文件大小 规格书
6页 1325K
描述
MOSFET N-CH

MMIX4G20N250 数据手册

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High Voltage IGBT  
For Capacitor Discharge  
Applications  
VCES = 2500V  
IC25 = 23A  
VCE(sat) 3.1V  
MMIX4G20N250  
C1  
C2  
Q1  
Q3  
Q2  
Q4  
( Electrically Isolated Tab)  
H-Bridge Configuration  
G2  
E2C4  
G1  
E1C3  
C2  
G2  
E2C4  
G4  
E3E4  
G3  
G4  
E3E4  
C1  
G1  
E1C3  
Symbol  
Test Conditions  
Maximum Ratings  
G3  
VCES  
VCGR  
TJ = 25°C to 150°C  
2500  
2500  
V
TJ = 25°C to 150°C, RGE = 1M  
V
Isolated Tab  
E3E4  
G4  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
E2C4  
G2  
C2  
G3  
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
23  
14  
A
A
E1C3  
G1  
TC = 25°C, VGE = 19V, 1ms  
10ms  
105  
55  
A
A
C1  
SSOA  
VGE= 15V, TVJ = 125°C, RG = 20  
ICM = 60  
1500  
A
V
G = Gate  
C = Collector  
E
= Emitter  
(RBSOA)  
Clamped Inductive Load  
PC  
TC = 25°C  
100  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
Isolated Mounting Surface  
4000V~ Electrical Isolation  
High Peak Current Capability  
Low Saturation Voltage  
TSOLD  
FC  
Plastic Body for 10 seconds  
Mounting Force  
260  
°C  
50..200 / 11..45  
Nm/lb.in.  
VISOL  
Weight  
50/60Hz, 1 Minute  
4000  
8
V~  
g
Molding Epoxies Meet UL 94 V-0  
Flammability Classification  
Symbol  
Test Conditions  
Characteristic Values  
Advantages  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
2500  
3.0  
Typ.  
Max.  
High Power Density  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = 0.8 • VCES, VGE = 0V  
V
Easy to Mount  
5.0  
V
10 A  
Note 2, TJ = 125°C  
750 A  
Applications  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
Capacitor Discharge  
VCE(sat)  
IC = 20A, VGE = 15V, Note 1  
3.1  
V
Pulser Circuits  
DS100278C(03/21)  
© 2021 Littelfuse, Inc.  

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