5秒后页面跳转
MMIX1G120N120A3V1 PDF预览

MMIX1G120N120A3V1

更新时间: 2024-11-05 21:19:55
品牌 Logo 应用领域
IXYS
页数 文件大小 规格书
7页 247K
描述
Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel,

MMIX1G120N120A3V1 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:compliant风险等级:5.72
最大集电极电流 (IC):220 A集电极-发射极最大电压:1200 V
门极发射器阈值电压最大值:5 V门极-发射极最大电压:20 V
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):400 W子类别:Insulated Gate BIP Transistors
表面贴装:YESBase Number Matches:1

MMIX1G120N120A3V1 数据手册

 浏览型号MMIX1G120N120A3V1的Datasheet PDF文件第2页浏览型号MMIX1G120N120A3V1的Datasheet PDF文件第3页浏览型号MMIX1G120N120A3V1的Datasheet PDF文件第4页浏览型号MMIX1G120N120A3V1的Datasheet PDF文件第5页浏览型号MMIX1G120N120A3V1的Datasheet PDF文件第6页浏览型号MMIX1G120N120A3V1的Datasheet PDF文件第7页 
Advance Technical Information  
GenX3TM 1200V  
IGBT w/ Diode  
VCES = 1200V  
IC110 = 105A  
VCE(sat) 2.2V  
MMIX1G120N120A3V1  
(Electrically Isolated Tab)  
C
Ultra-Low-Vsat PT IGBT for  
3kHz Switching  
G
Symbol  
VCES  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
Continuous  
Maximum Ratings  
E
1200  
1200  
±20  
V
V
V
V
VCGR  
Isolated Tab  
VGES  
C
VGEM  
Transient  
±30  
IC25  
IC110  
ICM  
TC = 25°C  
220  
105  
700  
A
A
A
TC = 110°C  
TC = 25°C, 1ms  
E
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 125°C, RG = 1Ω  
Clamped Inductive Load  
ICM = 240  
@ 0.8 • VCES  
A
G
G = Gate  
E
= Emitter  
PC  
TC = 25°C  
400  
W
C = Collector  
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
Isolated Mounting Surface  
2500V~ Electrical Isolation  
Optimized for Low Conduction losses  
Square RBSOA  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10  
300  
260  
°C  
°C  
VISOL  
FC  
50/60Hz, 1 minute  
Mounting Force  
2500  
50..200/11..45  
8
V~  
N/lb.  
g
Weight  
Anti-Parallel Ultra Fast Diode  
High Current Handling Capability  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
High Power Density  
Low Gate Drive Requirement  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1200  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 1mA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
5.0  
Applications  
50 μA  
Power Inverters  
UPS  
Motor Drives  
SMPS  
Note 2, TJ = 125°C  
5 mA  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = 100A, VGE = 15V, Note 1  
TJ = 125°C  
1.85  
1.95  
2.20  
V
V
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
Inrush Current Protection Circuits  
DS100435(01/12)  
© 2012 IXYS CORPORATION, All Rights Reserved  

与MMIX1G120N120A3V1相关器件

型号 品牌 获取价格 描述 数据表
MMIX1G320N60B3 LITTELFUSE

获取价格

Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel,
MMIX1G320N60B3 IXYS

获取价格

Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel,
MMIX1G75N250 LITTELFUSE

获取价格

Insulated Gate Bipolar Transistor, 110A I(C), 2500V V(BR)CES, N-Channel, PLASTIC PACKAGE-2
MMIX1G75N250 IXYS

获取价格

Insulated Gate Bipolar Transistor, 110A I(C), 2500V V(BR)CES, N-Channel, PLASTIC PACKAGE-2
MMIX1H60N150V1 LITTELFUSE

获取价格

专为大功率脉冲和电容放电应用而设计? 由施加在栅极的电压接通(MOS结构
MMIX1T132N50P3 LITTELFUSE

获取价格

SMPD封装重仅8g,相比传统的电源模块更轻(通常要轻50%),因此可打造重量更轻的电源系
MMIX1T550N055T2 LITTELFUSE

获取价格

SMPD封装重仅8g,相比传统的电源模块更轻(通常要轻50%),因此可打造重量更轻的电源系
MMIX1T600N04T2 LITTELFUSE

获取价格

SMPD封装重仅8g,相比传统的电源模块更轻(通常要轻50%),因此可打造重量更轻的电源系
MMIX1T660N04T4 LITTELFUSE

获取价格

Power Field-Effect Transistor,
MMIX1X100N60B3H1 LITTELFUSE

获取价格

我们的表面安装式功率器件(SMPD)封装技术在ISOPLUS?封装组合基础上有所扩展,纳入