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MMIX1G75N250 PDF预览

MMIX1G75N250

更新时间: 2024-11-18 21:14:19
品牌 Logo 应用领域
IXYS 通用开关光电二极管晶体管
页数 文件大小 规格书
6页 227K
描述
Insulated Gate Bipolar Transistor, 110A I(C), 2500V V(BR)CES, N-Channel, PLASTIC PACKAGE-21

MMIX1G75N250 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:PLASTIC PACKAGE-21针数:21
Reach Compliance Code:compliant风险等级:5.73
外壳连接:ISOLATED最大集电极电流 (IC):110 A
集电极-发射极最大电压:2500 V配置:SINGLE
门极发射器阈值电压最大值:5 V门极-发射极最大电压:20 V
JESD-30 代码:R-PDSO-G21元件数量:1
端子数量:21最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):430 W子类别:Insulated Gate BIP Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:GENERAL PURPOSE SWITCHING
晶体管元件材料:SILICON标称断开时间 (toff):725 ns
标称接通时间 (ton):280 nsBase Number Matches:1

MMIX1G75N250 数据手册

 浏览型号MMIX1G75N250的Datasheet PDF文件第2页浏览型号MMIX1G75N250的Datasheet PDF文件第3页浏览型号MMIX1G75N250的Datasheet PDF文件第4页浏览型号MMIX1G75N250的Datasheet PDF文件第5页浏览型号MMIX1G75N250的Datasheet PDF文件第6页 
Advance Technical Information  
High Voltage IGBT  
VCES = 2500V  
IC90 = 65A  
MMIX1G75N250  
For Capacitor Discharge  
Applications  
VCE(sat) 2.9V  
( Electrically Isolated Tab)  
C
G
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCES  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
2500  
2500  
V
V
E
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
Isolated Tab  
C
IC25  
IC90  
ICM  
TC = 25°C  
110  
65  
A
A
A
TC = 90°C  
TC = 25°C, VGE = 20V, 1ms  
580  
E
SSOA  
(RBSOA)  
PC  
V
GE= 15V, TVJ = 125°C, RG = 1Ω  
ICM = 200  
VCE < 0.8 VCES  
430  
A
G
Clamped Inductive Load  
TC = 25°C  
W
G = Gate  
E
= Emitter  
C = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
VISOL  
FC  
50/60Hz, 1 minute  
2500  
V~  
N/lb.  
g
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
Isolated Mounting Surface  
2500V~ Electrical Isolation  
High Peak Current Capability  
Low Saturation Voltage  
Mounting Force  
50..200 / 11..45  
8
Weight  
Molding Epoxies Meet UL 94 V-0  
Flammability Classification  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
2500  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 1mA, VGE = 0V  
IC = 4mA, VCE = VGE  
VCE = 0.8 • VCES, VGE = 0V  
V
V
Capacitor Discharge  
5.0  
Pulser Circuits  
50 μA  
mA  
Note 2, TJ = 125°C  
5
Advantages  
IGES  
VCE = 0V, VGE = ±20V  
±200 nA  
VCE(sat)  
IC = 75A, VGE = 15V, Note 1  
IC = 300A, VGE = 25V  
2.5  
4.1  
2.9  
V
V
High Power Density  
Easy to Mount  
DS100365(07/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  

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