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STD35NF06L PDF预览

STD35NF06L

更新时间: 2024-09-19 22:18:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
9页 434K
描述
N-CHANNEL 60V - 0.014ohm - 35A DPAK STripFET⑩II MOSFET

STD35NF06L 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-252AA包装说明:DPAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.68
雪崩能效等级(Eas):280 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):35 A
最大漏极电流 (ID):35 A最大漏源导通电阻:0.02 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):60 W
最大脉冲漏极电流 (IDM):140 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STD35NF06L 数据手册

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STD35NF06L  
N-CHANNEL 60V - 0.014 - 35A DPAK  
STripFET™ II POWER MOSFET  
V
DSS  
R
I
D
TYPE  
DS(on)  
STD35NF06L  
60 V  
< 0.017 Ω  
35 A  
TYPICAL R (on) = 0.014 Ω  
DS  
LOW THRESHOLD DRIVE  
GATE CHARGE MINIMIZED  
SURFACE-MOUNTING DPAK (TO-252)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX “T4")  
3
1
DPAK  
TO-252  
(Suffix “T4”)  
DESCRIPTION  
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™" strip-  
based process. The resulting transistor shows extremely  
high packing density for low on-resistance, rugged  
avalanche characteristics and less critical alignment  
steps  
reproducibility.  
therefore  
a
remarkable  
manufacturing  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
DC-AC CONVERTERS  
AUTOMOTIVE SWITCHING APPLICATION  
Ordering Information  
SALES TYPE  
MARKING  
PACKAGE  
PACKAGING  
STD35NF06LT4  
D35NF06L  
TO-252  
TAPE & REEL  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
V
Drain-source Voltage (V = 0)  
60  
60  
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
V
DGR  
GS  
V
Gate- source Voltage  
± 16  
35  
V
GS  
I
Drain Current (continuous) at T = 25°C  
A
D
C
I
Drain Current (continuous) at T = 100°C  
24.5  
140  
80  
A
D
C
I
()  
Drain Current (pulsed)  
A
DM  
P
Total Dissipation at T = 25°C  
W
tot  
C
Derating Factor  
0.67  
5
W/°C  
V/ns  
(1)  
(2)  
Peak Diode Recovery voltage slope  
dv/dt  
E
Single Pulse Avalanche Energy  
Storage Temperature  
280  
mJ  
AS  
T
stg  
-55 to 175  
°C  
T
Operating Junction Temperature  
j
() Pulse width limited by safe operating area.  
(1) I 35A, di/dt 100A/µs, V V  
, T T  
j JMAX  
SD  
DD  
(BR)DSS  
o
(2) Starting T = 25 C, I = 30A, V =30V  
j
D
DD  
November 2003  
1/9  

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