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STD361O PDF预览

STD361O

更新时间: 2024-11-24 20:05:51
品牌 Logo 应用领域
可天士 - KODENSHI /
页数 文件大小 规格书
4页 224K
描述
Transistor,

STD361O 数据手册

 浏览型号STD361O的Datasheet PDF文件第2页浏览型号STD361O的Datasheet PDF文件第3页浏览型号STD361O的Datasheet PDF文件第4页 
STD1862  
NPN Silicon Transistor  
Descriptions  
Audio power amplifier  
PIN Connection  
C
High current application  
B
Features  
High current : IC=2A  
Complementary pair with STB1277  
E
TO-92  
Ordering Information  
Type NO.  
Marking  
Package Code  
TO-92  
STD1862  
STD1862  
Absolute maximum ratings  
Characteristic  
(Ta=25°C)  
Symbol  
Ratings  
Unit  
Collector-Base voltage  
Collector-Emitter voltage  
Emitter-Base voltage  
Collector current  
VCBO  
VCEO  
VEBO  
IC  
30  
30  
V
V
5
V
2
A
Collector dissipation  
Junction temperature  
Storage temperature  
PC  
500  
150  
-55~150  
mW  
°C  
°C  
Tj  
Tstg  
Electrical Characteristics  
Characteristic  
(Ta=25°C)  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Test Condition  
Min. Typ. Max. Unit  
Collector-Base breakdown voltage  
Collector-Emitter breakdown voltage  
Emitter-Base breakdown voltage  
Collector cut-off current  
IC=100μA, IE=0  
IC=10mA, IB=0  
IE=1mA, IC=0  
30  
-
-
V
30  
-
-
-
V
5
-
V
VCB=30V, IE=0  
-
-
100  
100  
320  
1
nA  
nA  
-
Emitter cut-off current  
IEBO  
VEB=5V, IC=0  
-
-
*
DC current gain  
hFE  
VCE=2V, IC=500mA  
VCE=2V, IC=500mA  
IC=2A, IB=0.2A  
VCB=5V, IC=50mA  
VCB=10V, IE=0, f=1MHz  
100  
-
Base-Emitter on voltage  
VBE(on)  
VCE(sat)  
fT  
-
-
-
-
-
V
Collector-Emitter saturation voltage  
Transition frequency  
-
0.8  
-
V
170  
48  
MHz  
pF  
Collector output capacitance  
Cob  
-
*
: hFE rank / O : 100~200, Y : 160~320  
KSD-T0A023-001  
1

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