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STD38NF03L PDF预览

STD38NF03L

更新时间: 2024-09-19 22:24:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
6页 49K
描述
N - CHANNEL 30V - 0.013 ohm - 38A TO-252 STripFET POWER MOSFET

STD38NF03L 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-252AA包装说明:DPAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.79
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):38 A最大漏极电流 (ID):38 A
最大漏源导通电阻:0.0215 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):45 W最大脉冲漏极电流 (IDM):152 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STD38NF03L 数据手册

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STD38NF03L  
N - CHANNEL 30V - 0.013 - 38A TO-252  
STripFET POWER MOSFET  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on)  
ID  
STD38NF03L  
30 V  
< 0.019 Ω  
38 A  
TYPICAL RDS(on) = 0.013 Ω  
OPTIMIZED FOR HIGH SWTICHING  
OPERATIONS  
LOW THRESHOLD DRIVE  
ADD SUFFIX ”T4” FOR ORDERING IN TAPE  
& REEL  
3
1
DESCRIPTION  
DPAK  
TO-252  
(Suffix ”T4”)  
This Power MOSFET is the latest developmentof  
STMicroelectronics unique ”Single Feature  
Size ” strip-based process. The resulting transi-  
stor shows extremely high packing density for low  
on-resistance, rugged avalanche characteristics  
and less critical alignment steps therefore a re-  
markable manufacturingreproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC & DC-AC CONVERTERS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
30  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
V
V
VDGR  
VGS  
30  
± 20  
38  
V
o
ID(*)  
ID  
Drain Current (continuous) at Tc = 25 C  
A
o
Drain Current (continuous) at Tc = 100 C  
27  
A
IDM( ) Drain Current (pulsed)  
152  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
Derating Factor  
45  
W
0.3  
W/oC  
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 175  
175  
Max. Operating Junction Temperature  
( ) Pulse width limited by safe operating area  
(*)Value limited by the package  
1/6  
March 2000  

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