5秒后页面跳转
STD3NC50 PDF预览

STD3NC50

更新时间: 2024-11-23 22:14:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
7页 58K
描述
N - CHANNEL 500V - 2.4ohm - 3A TO-251/TO-252 PowerMESHII MOSFET

STD3NC50 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-252包装说明:DPAK-3
针数:3Reach Compliance Code:not_compliant
风险等级:5.81雪崩能效等级(Eas):210 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):3.2 A最大漏极电流 (ID):3.2 A
最大漏源导通电阻:2.7 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):60 W
最大脉冲漏极电流 (IDM):12.8 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON

STD3NC50 数据手册

 浏览型号STD3NC50的Datasheet PDF文件第2页浏览型号STD3NC50的Datasheet PDF文件第3页浏览型号STD3NC50的Datasheet PDF文件第4页浏览型号STD3NC50的Datasheet PDF文件第5页浏览型号STD3NC50的Datasheet PDF文件第6页浏览型号STD3NC50的Datasheet PDF文件第7页 
STD3NC50  
N - CHANNEL 500V - 2.4- 3A TO-251/TO-252  
PowerMESH ΙΙ MOSFET  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on)  
ID  
STD3NC50  
500 V  
< 2.7 Ω  
3 A  
TYPICAL RDS(on) = 2.4 Ω  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
NEW HIGH VOLTAGE BENCHMARK  
GATE CHARGE MINIMIZED  
ADD SUFFIX ”T4” FOR ORDERING IN TAPE  
& REEL.  
3
3
2
1
1
DPAK  
TO-252  
(Suffix ”T4”)  
IPAK  
TO-251  
(Suffix ”-1”)  
DESCRIPTION  
The PowerMESH  
generation of MESH OVERLAY . The layout  
refinements introduced greatly improve the  
Ron*area figure of merit while keeping the device  
at the leading edge for what concerns switching  
speed, gate charge and ruggedness.  
is the evolution of the first  
ΙΙ  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITH MODE POWER SUPPLIES (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENTAND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVER  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
500  
Unit  
V
Drain-source Voltage (VGS = 0)  
VDGR  
VGS  
500  
V
Drain- gate Voltage (RGS = 20 k  
Gate-source Voltage  
)
30  
V
±
ID  
Drain Current (continuous) at Tc = 25 oC  
3.2  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
2
12.8  
60  
A
IDM()  
Ptot  
Drain Current (pulsed)  
A
o
Total Dissipation at Tc = 25 C  
W
Derating Factor  
0.48  
4
W/oC  
V/ns  
oC  
oC  
dv/dt(1) Peak Diode Recovery voltage slope  
Tstg  
Storage Temperature  
-65 to 150  
Tj  
Max. Operating Junction Temperature  
150  
() Pulse width limited by safe operating area  
( 1) ISD 3 A, di/dt 100 A/µs, VDD V(BR)DSS, Tj TJMAX  
1/7  
January 2000  

与STD3NC50相关器件

型号 品牌 获取价格 描述 数据表
STD3NC50-1 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 3.2A I(D) | TO-251AA
STD3NC50T4 STMICROELECTRONICS

获取价格

3.2A, 500V, 2.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
STD3NC60 STMICROELECTRONICS

获取价格

N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK Po
STD3NC60-1 STMICROELECTRONICS

获取价格

N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK Po
STD3NC60T4 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3.2A I(D) | TO-252AA
STD3NK100Z STMICROELECTRONICS

获取价格

N-channel 1000V - 5.4Ω - 2.5A - TO-220 - TO-2
STD3NK50Z STMICROELECTRONICS

获取价格

N-CHANNEL 500V - 2.8ohm - 2.3A TO-92/DPAK/IPAK Zener-Protected SuperMESH MOSFET
STD3NK50Z-1 STMICROELECTRONICS

获取价格

N-CHANNEL 500V - 2.8ohm - 2.3A TO-92/DPAK/IPAK Zener-Protected SuperMESH MOSFET
STD3NK60Z STMICROELECTRONICS

获取价格

N-CHANNEL 600V - 3.3ohm - 2.4A TO-220/FP/D2PA
STD3NK60Z-1 STMICROELECTRONICS

获取价格

N-CHANNEL 600V - 3.3ohm - 2.4A TO-220/FP/D2PA