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STD3NK80ZT4 PDF预览

STD3NK80ZT4

更新时间: 2024-11-23 23:34:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
13页 609K
描述
N-CHANNEL 800V - 3.8 OHM - 2.5A TO-220/FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET

STD3NK80ZT4 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-252包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:1.68Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:180126
Samacsys Pin Count:3Samacsys Part Category:Integrated Circuit
Samacsys Package Category:TO-XXX (Inc. DPAK)Samacsys Footprint Name:DPAK (TO-252)_2
Samacsys Released Date:2015-07-12 18:13:02Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):170 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:800 V
最大漏极电流 (Abs) (ID):2.5 A最大漏极电流 (ID):2.5 A
最大漏源导通电阻:4.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):70 W
最大脉冲漏极电流 (IDM):10 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STD3NK80ZT4 数据手册

 浏览型号STD3NK80ZT4的Datasheet PDF文件第2页浏览型号STD3NK80ZT4的Datasheet PDF文件第3页浏览型号STD3NK80ZT4的Datasheet PDF文件第4页浏览型号STD3NK80ZT4的Datasheet PDF文件第5页浏览型号STD3NK80ZT4的Datasheet PDF文件第6页浏览型号STD3NK80ZT4的Datasheet PDF文件第7页 
STP3NK80Z - STF3NK80Z  
STD3NK80Z - STD3NK80Z-1  
N-CHANNEL 800V - 3.8- 2.5A TO-220/FP/DPAK/IPAK  
Zener-Protected SuperMESH™ Power MOSFET  
TYPE  
V
R
I
D
Pw  
DSS  
DS(on)  
STP3NK80Z  
STF3NK80Z  
STD3NK80Z  
STD3NK80Z-1  
800 V  
800 V  
800 V  
800 V  
< 4.5 Ω  
< 4.5 Ω  
< 4.5 Ω  
< 4.5 Ω  
2.5 A  
2.5 A  
2.5 A  
2.5 A  
70 W  
25 W  
70 W  
70 W  
3
3
2
2
TYPICAL R (on) = 3.8 Ω  
DS  
1
1
TO-220  
TO-220FP  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
GATE CHARGE MINIMIZED  
VERY LOW INTRINSIC CAPACITANCES  
VERY GOOD MANUFACTURING  
REPEATIBILITY  
3
3
2
1
1
DPAK  
IPAK  
DESCRIPTION  
The SuperMESH™ series is obtained through an  
extreme optimization of ST’s well established strip-  
based PowerMESH™ layout. In addition to pushing  
on-resistance significantly down, special care is tak-  
en to ensure a very good dv/dt capability for the  
most demanding applications. Such series comple-  
ments ST full range of high voltage MOSFETs in-  
cluding revolutionary MDmesh™ products.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
IDEAL FOR OFF-LINE POWER SUPPLIES,  
ADAPTORS AND PFC  
LIGHTING  
ORDERING INFORMATION  
SALES TYPE  
MARKING  
P3NK80Z  
F3NK80Z  
D3NK80Z  
D3NK80Z  
PACKAGE  
PACKAGING  
TUBE  
STP3NK80Z  
STF3NK80Z  
TO-220  
TO-220FP  
DPAK  
TUBE  
STD3NK80ZT4  
STD3NK80Z-1  
TAPE & REEL  
TUBE  
IPAK  
September 2003  
1/13  

STD3NK80ZT4 替代型号

型号 品牌 替代类型 描述 数据表
STD3NK80Z-1 STMICROELECTRONICS

完全替代

N-CHANNEL 800V - 3.8W - 2.5A TO-220/FP/DPAK/I
FQD2N80TF FAIRCHILD

功能相似

Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Met
FQD2N80TM FAIRCHILD

功能相似

N-Channel QFET MOSFET

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