Datasheet > STD3PK50Z

STD3PK50Z

更新时间： 2024-01-22 04:10:05

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	740K
描述
P-channel 500 V, 3 Î© typ., 2.8 A Zener-protected SuperMESHâ¢ Power MOSFET in a DPAK package

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替代型号

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STD3PK50Z 数据手册

STD3PK50Z

P-channel 500 V, 3 Ω typ., 2.8 A Zener-protected SuperMESH™

Power MOSFET in a DPAK package

Datasheet — production data

Features

Order code

V_DSSR_DS(on)max

< 4Ω

I_D

P_TOT

STD3PK50Z 500 V

2.8 A 70 W

TAB

■ Gate charge minimized

■ Extremely high dv/dt capability

■ 100% avalanche tested

DPAK

■ Very low intrinsic capacitance

■ Improved ESD capability

Applications

■ Switching applications

Figure 1.

Internal schematic diagram

Description

or TAB

This device is a P-channel Zener-protected Power

MOSFET developed using STMicroelectronics’

SuperMESH™ technology, achieved through

optimization of ST’s well established strip-based

PowerMESH™ layout. In addition to a significant

reduction in on-resistance, this device is designed

to ensure a high level of dv/dt capability for the

most demanding applications.

AM11279v1

Table 1.

Order code

STD3PK50Z

Device summary

Marking

Package

DPAK

Packaging

Tape and reel

3PK50Z

Note:

For the P-channel Power MOSFETs actual polarity of voltages and current has to be

reversed.

August 2012

Doc ID 18280 Rev 2

1/15

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...15

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STD3PK50Z 替代型号

型号	品牌	替代类型	描述	数据表
FQD3P50TF	FAIRCHILD	功能相似	Power Field-Effect Transistor, 2.1A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Met
FQD3P50TM	FAIRCHILD	功能相似	500V P-Channel MOSFET

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