Datasheet > STD3PS25

STD3PS25

更新时间： 2024-11-23 22:29:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
10页	447K
描述
P-CHANNEL 250V - 2.1 OHM - 3A DPAK/IPAK MESH OVERLAY MOSFET

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STD3PS25 数据手册

STD3PS25 - STD3PS25-1

P-CHANNEL 250V - 2.1Ω - 3A DPAK/IPAK

MESH OVERLAY™ MOSFET

TYPE

DSS

DS(on)

STD3PS25

STD3PS25-1

250 V

< 2.8 Ω

3 A

■

TYPICAL R (on) = 2.1Ω

100% AVALANCHE TESTED

APPLICATION ORIENTED

CHARACTERIZATION

DPAK

IPAK

■

STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

GATE-SOURCE ZENER DIODE

DESCRIPTION

INTERNAL SCHEMATIC DIAGRAM

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performance. The new patented STrip layout cou-

pled with the Company’s proprietary edge termina-

tion structure, makes it suitable in coverters for

lighting applications.

APPLICATIONS

■

CONSUMER

■

LIGHTING

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

250

Unit

Drain-source Voltage (V = 0)

Drain-gate Voltage (R = 20 kΩ)

250

DGR

Gate- source Voltage

±25

Drain Current (continuous) at T = 25°C

Drain Current (continuous) at T = 100°C

1.9

(1)

Drain Current (pulsed)

TOT

Total Dissipation at T = 25°C

Derating Factor

0.36

– 50 to 150

150

W/°C

°C

stg

Storage Temperature

Max. Operating Junction Temperature

June 2003

1/10

12 3 4 5 6 7...10

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