Datasheet > STD40N2LH5_09

STD40N2LH5_09

更新时间： 2024-01-09 04:47:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	920K
描述
N-channel 25V, 0.01 OHM, 40A, DPAK, IPAK STripFET V Power MOSFET

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中文翻译

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数据手册

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STD40N2LH5_09 数据手册

STD40N2LH5

STU40N2LH5

N-channel 25 V, 0.01 Ω, 40 A, DPAK, IPAK

STripFET™ V Power MOSFET

Features

Type

V_DSS

R_DS(on)max

I_D

STD40N2LH5

STU40N2LH5

25 V

0.0118 Ω

0.0124 Ω

40 A

■ R

* Q industry benchmark

DS(on)

■ Extremely low on-resistance R

DS(on)

DPAK

IPAK

■ Very low switching gate charge

■ High avalanche ruggedness

■ Low gate drive power losses

Application

■ Switching applications

Figure 1.

Internal schematic diagram

Description

This STripFET™ V Power MOSFET technology

is among the latest improvements, which have

been especially tailored to achieve very low on-

state resistance providing also one of the best-in-

class figure of merit (FOM).

Table 1.

Device summary

Order codes

Marking

Package

DPAK

IPAK

Packaging

STD40N2LH5

STU40N2LH5

40N2LH5

Tape and reel

Tube

September 2009

Doc ID 14919 Rev 3

1/15

www.st.com

12 3 4 5 6 7...15

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