Datasheet > STD40P8F6AG

STD40P8F6AG

更新时间： 2024-11-25 14:57:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	718K
描述
汽车级P沟道-80 V、18.5 mOhm典型值、-40 A STripFET F6功率MOSFET，DPAK封装

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STD40P8F6AG 数据手册

STD40P8F6AG

Automotive-grade P-channel -80 V, 18.5 mΩ typ., -40 A

STripFET™ F6 Power MOSFET in a DPAK package

Datasheet - production data

Features

Order code

V_DSS

R_DS(on)max.

I_D

STD40P8F6AG

-80 V

28 mΩ

-40 A



Designed for automotive applications and

AEC-Q101 qualified



Very low on-resistance

Very low gate charge

High avalanche ruggedness

Low gate drive power loss

Figure 1: Internal schematic diagram

D(2, TAB)

Applications



Switching applications

Description

This device is a P-channel Power MOSFET

developed using the STripFET™ F6 technology,

with a new trench gate structure. The resulting

Power MOSFET exhibits very low R_DS(on)in all

packages.

G(1)

S(3)

AM11258v1

Table 1: Device summary

Order code

Marking

Package

DPAK

Packing

STD40P8F6AG

40P8F6

Tape and reel

July 2016

DocID029583 Rev 1

1/16

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...16

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