Datasheet > STD47N10F7AG

STD47N10F7AG

更新时间： 2024-11-25 14:57:51

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意法半导体 - STMICROELECTRONICS		/
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16页	795K
描述
汽车级N沟道100 V、0.0125 Ohm典型值、45 A STripFET F7功率MOSFET，DPAK封装

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STD47N10F7AG 数据手册

STD47N10F7AG

Automotive-grade N-channel 100 V, 12.5 mΩ typ., 45 A,

STripFET™ F7 Power MOSFET in a DPAK package

Datasheet - production data

Features

R_DS(on)

max.

Order code

V_DS

I_D

P_TOT

STD47N10F7AG

100 V

18 mΩ

45 A 60 W



AEC-Q101 qualified

Among the lowest R_DS(on)on the market

Excellent FoM (figure of merit)

Low C_rss/C_issratio for EMI immunity

High avalanche ruggedness

Figure 1: Internal schematic diagram

Applications

D(2, TAB)



Switching applications

Description

This N-channel Power MOSFET utilizes

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low

on-state resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

G(1)

S(3)

AM01475v1_noZen

Table 1: Device summary

Order code

Marking

Package

Packing

STD47N10F7AG

47N10F7

DPAK

Tape and reel

February 2017

DocID027183 Rev 3

1/16

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...16

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