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STD4N80K5 PDF预览

STD4N80K5

更新时间: 2024-09-29 14:57:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
23页 1294K
描述
N沟道800 V、2.1 Ohm典型值、3 A MDmesh K5功率MOSFET,DPAK封装

STD4N80K5 数据手册

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STD4N80K5, STF4N80K5,  
STP4N80K5, STU4N80K5  
N-channel 800 V, 2.1 typ., 3 A MDmesh™ K5 Power MOSFETs  
in DPAK, TO-220FP, TO-220 and IPAK packages  
Datasheet  
-
production data  
Features  
TAB  
Order code  
VDS RDS(on) max.  
ID  
PTOT  
3
1
STD4N80K5  
STF4N80K5  
STP4N80K5  
STU4N80K5  
60 W  
20 W  
3
DPAK  
2
1
800 V  
2.5  
3 A  
TO-220FP  
TAB  
60 W  
TAB  
Industry’s lowest RDS(on) x area  
3
3
2
2
1
Industry’s best figure of merit (FoM)  
Ultra low gate charge  
1
IPAK  
TO-220  
100% avalanche tested  
Zener-protected  
Figure 1. Internal schematic diagram  
'ꢀꢁꢂꢃ7$%ꢄ  
Applications  
Switching applications  
Description  
*ꢀꢅꢄ  
These very high voltage N-channel Power  
MOSFETs are designed using MDmesh™ K5  
technology based on an innovative proprietary  
vertical structure. The result is a dramatic  
reduction in on-resistance and ultra-low gate  
charge for applications requiring superior power  
density and high efficiency.  
6ꢀꢆꢄ  
AM01476v1  
Table 1. Device summary  
Order code  
Marking  
Packages  
Packaging  
STD4N80K5  
STF4N80K5  
STP4N80K5  
STU4N80K5  
DPAK  
TO-220FP  
TO-220  
IPAK  
Tape and reel  
4N80K5  
Tube  
February 2015  
DocID025105 Rev 3  
1/23  
This is information on a product in full production.  
www.st.com  

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